Datasheet > M12L64164A-5BIG

M12L64164A-5BIG

更新时间： 2024-01-21 21:10:59

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器
页数	文件大小	规格书
45页	821K
描述
1M x 16 Bit x 4 Banks Synchronous DRAM

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M12L64164A-5BIG 数据手册

ESMT

M12L64164A

Operation Temperature Condition -40°C~85°C

Revision History

Revision 0.1 (Dec. 12 2004)

- Original

Revision 1.0 (Jun. 13 2006)

- Add Pb free

Revision 1.1 (Dec. 29 2006)

- Add -5TIG and -5BIG spec

Revision 1.2 (Dec. 13 2007)

- Add BGA type to ordering information

-Modify BGA ball packing dimensions

- Modify Icc2N test condition (/CS <= VIH VIH Î /CS >= VIH )

- Modify tSHZ timing

-Modify DQ pin capacitance spec

Elite Semiconductor Memory Technology Inc.

Publication Date: Dec. 2007

Revision: 1.2

1/45

12 3 4 5 6 7...45

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型号	品牌	获取价格	描述	数据表
M12L64164A-5BIG2M	ESMT	获取价格	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F
M12L64164A-5TG	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2M	ESMT	获取价格	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
M12L64164A-5TG2Y	ESMT	获取价格	1M x 16 Bit x 4 Banks
M12L64164A-5TIG	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TIG2M	ESMT	获取价格	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
M12L64164A-5TIG2Y	ESMT	获取价格	Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE,
M12L64164A-6BG	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6BG2C	ESMT	获取价格	Synchronous DRAM, 4MX16, CMOS, PBGA54, VBGA-54
M12L64164A-6BG2M	ESMT	获取价格	Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F