生命周期: | Contact Manufacturer | 包装说明: | BGA-54 |
Reach Compliance Code: | unknown | 风险等级: | 5.6 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 5.4 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 166 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | S-PBGA-B54 | 长度: | 8 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16MX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装等效代码: | BGA54,6X9,30 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
刷新周期: | 8192 | 反向引出线: | NO |
座面最大高度: | 1 mm | 自我刷新: | YES |
连续突发长度: | 1,2,4,8 | 最小待机电流: | 3 V |
最大压摆率: | 0.08 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M12L2561616A-6BIG | ESMT |
获取价格 |
4M x 16 Bit x 4 Banks Synchronous DRAM |
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M12L2561616A-6BIG2A | ESMT |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD |
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M12L2561616A-6BIG2K | ESMT |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD |
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M12L2561616A-6BIG2S | ESMT |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS |
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M12L2561616A-6TG | ESMT |
获取价格 |
4M x 16 Bit x 4 Banks Synchronous DRAM |
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M12L2561616A-6TG2A | ESMT |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COM |
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M12L2561616A-6TG2K | ESMT |
获取价格 |
JEDEC standard 3.3V power supply |
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M12L2561616A-6TG2S | ESMT |
获取价格 |
暂无描述 |
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M12L2561616A-6TIG | ESMT |
获取价格 |
4M x 16 Bit x 4 Banks Synchronous DRAM |
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M12L2561616A-6TIG2A | ESMT |
获取价格 |
暂无描述 |
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