5秒后页面跳转
M12L16161A-7BIG PDF预览

M12L16161A-7BIG

更新时间: 2024-01-31 23:34:31
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器
页数 文件大小 规格书
29页 698K
描述
512K x 16Bit x 2Banks Synchronous DRAM

M12L16161A-7BIG 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:50
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.32
Is Samacsys:N访问模式:DUAL BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G50长度:20.95 mm
内存密度:16777216 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:50
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
认证状态:Not Qualified座面最大高度:1.2 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

M12L16161A-7BIG 数据手册

 浏览型号M12L16161A-7BIG的Datasheet PDF文件第2页浏览型号M12L16161A-7BIG的Datasheet PDF文件第3页浏览型号M12L16161A-7BIG的Datasheet PDF文件第4页浏览型号M12L16161A-7BIG的Datasheet PDF文件第5页浏览型号M12L16161A-7BIG的Datasheet PDF文件第6页浏览型号M12L16161A-7BIG的Datasheet PDF文件第7页 
ESMT  
M12L16161A  
Operation temperature condition -40~85℃  
SDRAM  
512K x 16Bit x 2Banks  
Synchronous DRAM  
FEATURES  
GENERAL DESCRIPTION  
The M12L16161A is 16,777,216 bits synchronous high  
data rate Dynamic RAM organized as 2 x 524,288 words by  
16 bits, fabricated with high performance CMOS technology.  
Synchronous design allows precise cycle control with the  
use of system clock I/O transactions are possible on every  
clock cycle. Range of operating frequencies, programmable  
burst length and programmable latencies allow the same  
device to be useful for a variety of high bandwidth, high  
performance memory system applications.  
z
z
z
z
JEDEC standard 3.3V power supply  
LVTTL compatible with multiplexed address  
Dual banks operation  
MRS cycle with address key programs  
-
-
-
CAS Latency (2 & 3 )  
Burst Length (1, 2, 4, 8 & full page)  
Burst Type (Sequential & Interleave)  
z
All inputs are sampled at the positive going edge of the  
system clock  
z
z
z
z
Burst Read Single-bit Write operation  
DQM for masking  
Auto & self refresh  
ORDERING INFORMATION  
32ms refresh period (2K cycle)  
Part NO.  
MAX Freq.  
Package COMMENTS  
M12L16161A-5TIG  
M12L16161A-7TIG  
M12L16161A-7BIG  
TSOP(II)  
TSOP(II)  
VFBGA  
Pb-free  
Pb-free  
Pb-free  
200MHz  
143MHz  
143MHz  
PIN CONFIGURATION (TOP VIEW)  
1
2
3
4
5
6
7
DQ0  
DQ15  
VDD  
A
B
VSS  
VDD  
DQ0  
DQ1  
VSSQ  
DQ2  
DQ3  
VDDQ  
DQ4  
DQ5  
VSSQ  
DQ6  
DQ7  
VDDQ  
LDQM  
WE  
1
VSS  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
VDDQ  
VSSQ  
DQ1  
DQ2  
DQ14  
DQ13  
VSSQ  
VDDQ  
2
DQ15  
DQ14  
VSSQ  
DQ13  
DQ12  
VDDQ  
DQ11  
DQ10  
VSSQ  
DQ9  
DQ8  
VDDQ  
N.C/RFU  
UDQM  
CLK  
CKE  
N.C  
3
C
D
E
F
4
DQ4  
DQ3  
DQ5  
5
DQ12  
DQ10  
DQ9  
DQ11  
6
VDDQ  
VSSQ  
7
8
VSSQ  
NC  
VDDQ  
NC  
DQ6  
DQ7  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
G
H
J
DQ8  
NC  
NC  
NC  
NC  
NC  
WE  
UDQM  
LDQM  
NC  
CLK  
NC  
A9  
RAS  
NC  
CAS  
CS  
K
L
CAS  
RAS  
CS  
CKE  
BA  
A9  
NC  
A0  
NC  
A11  
A8  
M
N
P
R
A10/AP  
A0  
A8  
A7  
A10  
A7  
A1  
A6  
A2  
A5  
A1  
A6  
A5  
A4  
A2  
A3  
A3  
A4  
50PIN TSOP(II)  
(400mil x 825mil)  
(0.8 mm PIN PITCH)  
60 Ball VFBGA  
(6.4x10.1mm)  
(0.65mm ball pitch)  
VDD  
VSS  
VSS  
VDD  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May. 2007  
Revision : 1.1 1/29  

与M12L16161A-7BIG相关器件

型号 品牌 获取价格 描述 数据表
M12L16161A-7T ESMT

获取价格

512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG ESMT

获取价格

512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG2Q ESMT

获取价格

512K x 16Bit x 2Banks
M12L16161A-7TIG ESMT

获取价格

512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TIG2Q ESMT

获取价格

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE,
M12L16161A-8T ESMT

获取价格

512K x 16Bit x 2Banks Synchronous DRAM
M12L2561616A ESMT

获取价格

4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A_08 ESMT

获取价格

4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A_1 ESMT

获取价格

4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A2K ESMT

获取价格

JEDEC standard 3.3V power supply