5秒后页面跳转
M1 PDF预览

M1

更新时间: 2024-11-06 15:18:47
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 209K
描述
SMA

M1 数据手册

 浏览型号M1的Datasheet PDF文件第2页浏览型号M1的Datasheet PDF文件第3页浏览型号M1的Datasheet PDF文件第4页 
RoHS  
M1 THRU M7  
COMPLIANT  
Surface Mount General Purpose Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer  
and telecommunication.  
Mechanical Data  
ackage: DO-214AC (SMA)  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
M1  
M2  
M2  
100  
70  
M3  
M3  
M4  
M4  
M5  
M5  
M6  
M6  
M7  
M7  
PARAMETER  
SYMBOL  
UNIT  
M1  
50  
35  
50  
Device marking code  
V
V
V
V
A
200  
140  
200  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
280  
RMS  
V
100  
400  
1000  
Maximum DC blocking Voltage  
DC  
Average rectified output current  
@60Hz sine wave, Resistance load, TL (FIG.1)  
I
1.0  
O
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25  
Forward Surge Current (Non-repetitive)  
30  
IFSM  
A
60  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t≤8.3ms Tj=25℃  
A2s  
I2t  
3.7  
T
-55 ~ +150  
-55 ~ +150  
Storage temperature  
Junction temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
M1  
M2  
M3  
M4  
M5  
M6  
M7  
PARAMETER  
SYMBOL  
UNIT  
CONDITIONS  
=1.0A  
Maximum instantaneous  
forward voltage  
V
I
FM  
V
1.1  
5
F
T =25℃  
j
Maximum DC reverse current at  
rated DC blocking voltage  
I
μA  
pF  
R
100  
T =125℃  
j
Measured at 1MHz and  
Applied Reverse Voltage of  
4.0 V.D.C  
Typical junction capacitance  
Cj  
6
1 / 4  
S-S1682  
Rev.2.0,19-Sep-22  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

与M1相关器件

型号 品牌 获取价格 描述 数据表
M1(1N4001) TDD

获取价格

整流二极管1A 50V SMA
M1.5KE100A MICROSEMI

获取价格

Unidirectional and Bidirectional Transient Voltage Suppressor
M1.5KE100A/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, P
M1.5KE100AE3/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, R
M1.5KE100AE3TR MICROSEMI

获取价格

1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN
M1.5KE100ATR MICROSEMI

获取价格

1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1, 2 PIN
M1.5KE100ATRE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, R
M1.5KE100C MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Bidirectional, 1 Element, Silicon, PL
M1.5KE100CA/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 1500W, 85.5V V(RWM), Bidirectional, 1 Element, Silicon, PL
M1.5KE100CAE3TR MICROSEMI

获取价格

1500W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN