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LY62L12916GL-55LL PDF预览

LY62L12916GL-55LL

更新时间: 2024-11-17 00:23:59
品牌 Logo 应用领域
台湾来扬 - LYONTEK 静态存储器
页数 文件大小 规格书
17页 467K
描述
128K X 16 BIT LOW POWER CMOS SRAM

LY62L12916GL-55LL 数据手册

 浏览型号LY62L12916GL-55LL的Datasheet PDF文件第2页浏览型号LY62L12916GL-55LL的Datasheet PDF文件第3页浏览型号LY62L12916GL-55LL的Datasheet PDF文件第4页浏览型号LY62L12916GL-55LL的Datasheet PDF文件第5页浏览型号LY62L12916GL-55LL的Datasheet PDF文件第6页浏览型号LY62L12916GL-55LL的Datasheet PDF文件第7页 
®
LY62L12916  
128K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.0  
REVISION HISTORY  
Revision  
Rev. 0.1  
Rev. 0.2  
Rev. 0.3  
Description  
Initial Issue  
Revised Package Outline Dimension(TSOP-II)  
Issue Date  
May.20.2005  
Apr.12.2007  
Apr.17.2009  
FEATURES ORDERING INFORMATION  
Revised  
&
Lead free and green package available to Green package  
available  
ORDERING INFORMATION  
Added packing type in  
Revised VTERM to VT1 and VT2  
ABSOLUTE MAXIMUN RATINGS  
Deleted TSOLDER in  
Revised Test Condition of ISB1/IDR  
Rev. 0.4  
Jun.15.2009  
Added ISB1/IDR values when TA = 25 and TA = 40  
Added SL grade  
Deleted L grade  
Rev. 0.5  
Rev. 0.6  
Rev. 1.0  
May.6.2010  
Aug.30.2010  
Aug.29.2013  
PACKAGE OUTLINE DIMENSION  
Revised  
in page 12  
ORDERING INFORMATION  
Revised Notes item 1 and 2 in page 4  
Revised  
in page 13  
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.  
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.  
ORDERING INFORMATION  
Revised  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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