Datasheet > LY61L5128AGL-10IT

LY61L5128AGL-10IT

更新时间： 2024-11-24 00:54:51

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
12页	500K
描述
512K X 8 BIT HIGH SPEED CMOS SRAM

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LY61L5128A

512K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

REVISION HISTORY

Revision

Rev. 1.0

Rev. 1.1

Description

Initial Issue

Issue Date

Jul.12.2012

Jul.19.2012

Revised TEST CONDITION of Average Operating Power Supply

Current(Icc₁) on page 3,

≧ ≦

V_CC- 0.2V” revised as ”CE# 0.2V”

“CE#

Rev. 1.2

Rev. 1.3

Add “Green package available” on page 1

1.Revised TEST CONDITION of V_OH, V_OLon page 4

Nov.02.2012

Jun.04.2013

I_OH= -8mA revised as -4mA

I_OL=4mA revised as 8mA

2.Revised V_IH(max)& V_IL(min)Notes on page 4

V_IH(max)= V_CC+ 2.0V for pulse width less than 6ns.

V_IL(min)= V_SS- 2.0V for pulse width less than 6ns.

Revised the address pin sequence of TSOP-II pin configuration on page 2

to be compatible with industrial convention. (No function specifications and

applications changed and all characteristics kept same as Rev 1.3 )

Deleted Commercial Grade

Rev. 1.4

Rev. 1.5

Oct.30.2013

Jun.22.2016

Added PKG type : 36-ball 6mm x 8mm TFBGA

Deleted WRITE CYCLE _{Notes :}

_{1.WE#,CE# must be high during all address transitions.}In page 6.

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

2F, No. 17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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