Datasheet > LY61L51216AML-8T

LY61L51216AML-8T

更新时间： 2024-11-24 00:42:07

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
12页	300K
描述
512K X 16 BIT HIGH SPEED CMOS SRAM

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LY61L51216AML-8T 数据手册

LY61L51216A

512K X 16 BIT HIGH SPEED CMOS SRAM

Rev. 1.3

REVISION HISTORY

Revision

Rev. 1.0

Rev. 1.1

Description

Initial Issued

Issue Date

2012/2/22

July.19. 2012

≧

≦

“CE# V_CC- 0.2V” revised as ”CE# 0.2” for TEST

CONDITION of Average Operating Power supply Current

Icc1 on page3

2.Revised ORDERING INFORMATION Page13

1.Revise “TEST CONDITION” for VOH, VOL on page 4

Rev. 1.2

Rev. 1.3

June. 04. 2013

I_OH= -8mA revised as -4mA

I^OL=4mA revised as 8mA

2.Revise VIH(max) & VIL(min) note on page 4

VIH(max) = VCC + 2.0V for pulse width less than 6ns.

VIL(min) = VSS - 2.0V for pulse width less than 6ns.

Revised the address pin sequence of TSOP-II pin configuration on

page 2 in order to be compatible with industry convention. (No

function specifications and applications have been changed and all

the characteristics are kept all the same as Rev 1.2 )

Oct. 30. 2013

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan

TEL: 886-3-6668838

FAX: 886-3-6668836

12 3 4 5 6 7...12

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