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LY61L51216AML-10 PDF预览

LY61L51216AML-10

更新时间: 2024-11-27 00:42:07
品牌 Logo 应用领域
台湾来扬 - LYONTEK 静态存储器
页数 文件大小 规格书
12页 300K
描述
512K X 16 BIT HIGH SPEED CMOS SRAM

LY61L51216AML-10 数据手册

 浏览型号LY61L51216AML-10的Datasheet PDF文件第2页浏览型号LY61L51216AML-10的Datasheet PDF文件第3页浏览型号LY61L51216AML-10的Datasheet PDF文件第4页浏览型号LY61L51216AML-10的Datasheet PDF文件第5页浏览型号LY61L51216AML-10的Datasheet PDF文件第6页浏览型号LY61L51216AML-10的Datasheet PDF文件第7页 
®
LY61L51216A  
512K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.3  
REVISION HISTORY  
Revision  
Rev. 1.0  
Rev. 1.1  
Description  
Initial Issued  
Issue Date  
2012/2/22  
July.19. 2012  
“CE# VCC - 0.2V” revised as ”CE# 0.2” for TEST  
CONDITION of Average Operating Power supply Current  
Icc1 on page3  
2.Revised ORDERING INFORMATION Page13  
1.Revise “TEST CONDITION” for VOH, VOL on page 4  
Rev. 1.2  
Rev. 1.3  
June. 04. 2013  
IOH = -8mA revised as -4mA  
IOL =4mA revised as 8mA  
2.Revise VIH(max) & VIL(min) note on page 4  
VIH(max) = VCC + 2.0V for pulse width less than 6ns.  
VIL(min) = VSS - 2.0V for pulse width less than 6ns.  
Revised the address pin sequence of TSOP-II pin configuration on  
page 2 in order to be compatible with industry convention. (No  
function specifications and applications have been changed and all  
the characteristics are kept all the same as Rev 1.2 )  
Oct. 30. 2013  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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