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LY61L25616AML-10 PDF预览

LY61L25616AML-10

更新时间: 2024-11-25 00:53:39
品牌 Logo 应用领域
台湾来扬 - LYONTEK 静态存储器
页数 文件大小 规格书
15页 454K
描述
256K X 16 BIT HIGH SPEED CMOS SRAM

LY61L25616AML-10 数据手册

 浏览型号LY61L25616AML-10的Datasheet PDF文件第2页浏览型号LY61L25616AML-10的Datasheet PDF文件第3页浏览型号LY61L25616AML-10的Datasheet PDF文件第4页浏览型号LY61L25616AML-10的Datasheet PDF文件第5页浏览型号LY61L25616AML-10的Datasheet PDF文件第6页浏览型号LY61L25616AML-10的Datasheet PDF文件第7页 
LY61L25616A  
256K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.4  
REVISION HISTORY  
Revision  
Rev. 1.0  
Rev. 1.1  
Description  
Initial Issue  
Issue Date  
Jul.12.2012  
Jul.19.2012  
 
VCC - 0.2V” revised as ”CE# 0.2V” for TEST CONDITION  
“CE#  
of Average Operating Power supply Current  
Icc1 on page3  
Revised VIH(max)/VIL(min) in  
Rev. 1.2  
May.7.2013  
DC ELECTRICAL CHARACTERISTICS  
Added in tBA/tBHZ*/tBLZ*  
AC ELECTRICAL CHARACTERISTICS  
in  
TIMING WAVEFORMS  
Added WRITE CYCLE 3 in  
1.Revise “TEST CONDITION” for VOH, VOL on page 5  
Rev. 1.3  
Jun.04.2013  
Sep.23.2013  
I
I
OH = -8mA revised as -4mA  
OL =4mA revised as 8mA  
2.Revise VIH(max) & VIL(min) note on page 5  
VIH(max) = VCC + 2.0V for pulse width less than 6ns.  
VIL(min) = VSS - 2.0V for pulse width less than 6ns.  
Revised the address pin sequence of TSOP-II pin configuration on  
page 3 in order to be compatible with industry convention. (No  
function specifications and applications have been changed and all  
the characteristics are kept all the same as Rev 1.3 )  
Rev. 1.4  
AC ELECTRICAL CHARACTERISTICS  
Added tBW in  
TIMING WAVEFORMS  
Revised WRITE CYCLE 1,2 in  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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