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LY61L10248AML-8I PDF预览

LY61L10248AML-8I

更新时间: 2024-09-25 00:42:07
品牌 Logo 应用领域
台湾来扬 - LYONTEK 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 297K
描述
1M X 8 BIT HIGH SPEED CMOS SRAM

LY61L10248AML-8I 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSOP2,Reach Compliance Code:compliant
风险等级:5.8最长访问时间:8 ns
JESD-30 代码:R-PDSO-G44长度:18.415 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

LY61L10248AML-8I 数据手册

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®
LY61L10248A  
1M X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.3  
REVISION HISTORY  
Revision  
Description  
Initial Issued  
Issue Date  
2012/2/21  
Rev. 1.0  
Rev. 1.1  
July.19. 2012  
1.“CE# VCC - 0.2V” revised as ”CE# 0.2” for TEST  
CONDITION of Average Operating Power supply Current  
Icc1 on page3  
2.Revised ORDERING INFORMATION Page11  
1.Revise “TEST CONDITION” for VOH, VOL on page 4  
Rev. 1.2  
Rev. 1.3  
June. 04. 2013  
IOH = -8mA revised as -4mA  
IOL =4mA revised as 8mA  
2.Revise VIH(max) & VIL(min) note on page 4  
VIH(max) = VCC + 2.0V for pulse width less than 6ns.  
VIL(min) = VSS - 2.0V for pulse width less than 6ns.  
Revised the address pin sequence of TSOP-II pin configuration on  
page 3 in order to be compatible with industry convention. (No  
function specifications and applications have been changed and all  
the characteristics are kept all the same as Rev 1.2 )  
Oct. 30. 2013  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu County 300, Taiwan  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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