Datasheet > LY61L102416AGL-12I

LY61L102416AGL-12I

更新时间： 2024-09-25 00:48:19

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
13页	360K
描述
1024K X 16 BIT HIGH SPEED CMOS SRAM

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LY61L102416A

1024K X 16 BIT HIGH SPEED CMOS SRAM

Rev. 1.4

REVISION HISTORY

Revision

Description

Initial Issued

Add 48 pin BGA package type.

Issue Date

Rev. 1.0

Rev. 1.1

Jan.09. 2012

Mar.12. 2012

Rev. 1.2

July.19. 2012

≧

≦

1.“CE# V_CC- 0.2V” revised as ”CE# 0.2” for TEST

CONDITION of Average Operating Power supply Current

Icc1 on page3

2.Revised ORDERING INFORMATION Page11

1.Revise “TEST CONDITION” for VOH, VOL on page 3

Rev. 1.3

June. 04. 2013

Oct. 30. 2013

I_OH= -8mA revised as -4mA

I^OL=4mA revised as 8mA

2.Revise VIH(max) & VIL(min) note on page 3

VIH(max) = VCC + 2.0V for pulse width less than 6ns.

VIL(min) = VSS - 2.0V for pulse width less than 6ns.

Rev.1.4

Revised the address pin sequence of pin configuration of 48 pin

TSOP-I on page 2 in order to be compatible with industry convention.

(No function specifications and applications have been changed and all

the characteristics are kept all the same as Rev 1.3 )

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan

TEL: 886-3-6668838

FAX: 886-3-6668836

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