Datasheet > LY6164RN-12Z

LY6164RN-12Z

更新时间： 2024-09-25 10:48:43

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
12页	293K
描述
SRAM,

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中文翻译

获取价格

数据手册

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LY6164RN-12Z 数据手册

LY6164

8K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.0

FEATURES

GENERAL DESCRIPTION

The LY6164 is a 65,536-bit high speed CMOS static

random access memory organized as 8,192 words

by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

Fast access time : 8/10/12/15ns

Low power consumption:

Operating current : 110/100/90/80mA (TYP.)

Standby current : 1mA (TYP.)

Single 5V power supply

All inputs and outputs TTL compatible

Fully static operation

The LY6164 is well designed for high speed system

applications, and particularly well suited for battery

back-up nonvolatile memory application.

Tri-state output

Data retention voltage : 2.0V (MIN.)

Lead free and green package available

Package : 28-pin 300 mil SOJ

28-pin 300 mil Skinny P-DIP

The LY6164 operates from a single power supply

of 5V and all inputs and outputs are fully TTL

compatible

28-pin 8mm x 13.4mm STSOP

PRODUCT FAMILY

Product

Family

Operating

Temperature

Power Dissipation

Speed

Vcc Range

Standby(I^SB1,TYP.) Operating(Icc,TYP.)

0 ~ 70℃

-20 ~ 80℃

-40 ~ 85℃

LY6164

LY6164(E)

LY6164(I)

4.5 ~ 5.5V

8/10/12/15ns

1mA

110/100/90/80mA

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

SYMBOL

DESCRIPTION

Address Inputs

A0 - A12

Vcc

Vss

DQ0 – DQ7 Data Inputs/Outputs

CE#, CE2

WE#

OE#

Chip Enable Inputs

Write Enable Input

Output Enable Input

Power Supply

8Kx8

MEMORY ARRAY

A0-A12

DECODER

V_CC

V_SS

Ground

No Connection

I/O DATA

CIRCUIT

DQ0-DQ7

COLUMN I/O

CE#

CE2

WE#

OE#

CONTROL

CIRCUIT

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

40 Hsuch-Fu Rd., Hsinchu, Taiwan.

TEL: 886-3-5165511

FAX: 886-3-5165522

12 3 4 5 6 7...12

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