Datasheet > LX8050QLT3G

LX8050QLT3G

更新时间： 2024-02-27 08:16:57

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	69K
描述
General Purpose Transistors NPN Silicon

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中文翻译

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数据手册

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LX8050QLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

FEATURE

ƽHigh current capacity in compact package.

LX8050PLT1G

Series

S-LX8050PLT1G

Series

I_C= 0.5A.

ƽEpitaxial planar type.

ƽNPN complement: LX8050

ƽPb-Free Package is available.

ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and

Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

SOT–23

Shipping

Device

Marking

COLLECTOR

(S-)LX8050PLT1G

3000/Tape&Reel

X8A

(S-)LX8050PLT3G

(S-)LX8050QLT1G

(S-)LX8050QLT3G

(S-)LX8050RLT1G

(S-)LX8050RLT3G

10000/Tape&Reel

3000/Tape&Reel

X8A

X8C

X8E

X8G

BASE

10000/Tape&Reel

3000/Tape&Reel

EMITTER

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

(S-)LX8050SLT1G

(S-)LX8050SLT3G

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

V_CBO

V_EBO

Collector Current-continuoun

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

RθJ A

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

Rθ^{J A}

417

°C/W

°C

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/4

12 3 4

中文翻译

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