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LX803 PDF预览

LX803

更新时间: 2024-01-30 03:57:29
品牌 Logo 应用领域
POLYFET 晶体晶体管
页数 文件大小 规格书
2页 56K
描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX803 数据手册

 浏览型号LX803的Datasheet PDF文件第2页 
polyfet rf devices  
LX803  
General Description  
Silicon VDMOS and LDMOS  
transistors designed specifically  
for broadband RF applications.  
Suitable for Military Radios,  
SILICON GATE ENHANCEMENT MODE  
RF POWER LDMOS TRANSISTOR  
Cellular and Paging Amplifier Base  
Stations, Broadcast FM/AM, MRI,  
45Watts Single Ended  
Package Style LX2  
Laser Driver and others.  
TM  
"Polyfet" process features low  
feedback and output capacitances  
HIGH EFFICIENCY, LINEAR,  
HIGH GAIN, LOW NOISE  
resulting in high F transistors with  
t
high input impedance and high  
efficiency.  
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)  
Total  
Junction to  
Maximum  
Junction  
Temperature  
Storage  
DC Drain  
Current  
Drain to  
Gate  
Voltage  
Drain to  
Source  
Voltage  
Gate to  
Source  
Voltage  
Device  
Dissipation  
Case Thermal  
Resistance  
Temperature  
o
o
o
o
120 Watts  
1.25  
6 A  
70 V  
70 V  
20 V  
C/W  
200 C  
-65 C to 150 C  
RF CHARACTERISTICS (  
45WATTS OUTPUT )  
SYMBOL  
Gps  
PARAMETER  
MIN  
11  
TYP  
MAX  
UNITS  
dB  
TEST CONDITIONS  
Common Source Power Gain  
Drain Efficiency  
Idq = 1.2 A, Vds = 28.0V, F = 1000 MHz  
Idq = 1.2 A, Vds = 28.0V, F = 1000 MHz  
55  
%
h
VSWR  
Load Mismatch Tolerance  
20:1  
Relative Idq = 1.2 A, Vds = 28.0V, F = 1000 MHz  
ELECTRICAL CHARACTERISTICS (EACH SIDE)  
SYMBOL  
Bvdss  
Idss  
PARAMETER  
MIN  
65  
TYP  
MAX  
UNITS  
V
TEST CONDITIONS  
Ids = 0.2 A,  
Vds = 28.0V, Vgs = 0V  
Drain Breakdown Voltage  
Zero Bias Drain Current  
Vgs = 0V  
3
1
7
mA  
uA  
Igss  
Gate Leakage Current  
Vds = 0 V,  
Vgs = 30V  
Vgs = Vds  
Vgs  
Gate Bias for Drain Current  
Forward Transconductance  
Saturation Resistance  
1
Ids = 0.3 A,  
V
Mho  
Ohm  
Amp  
pF  
gM  
2.4  
0.35  
16.5  
90  
Vds = 10V, Vgs = 5V  
Rdson  
Idsat  
Ciss  
Vgs = 20V, Ids = 7.5 A  
Saturation Current  
Vgs = 20V, Vds = 10V  
Common Source Input Capacitance  
Common Source Feedback Capacitance  
Common Source Output Capacitance  
Vds = 28.0 V, Vgs = 0V, F = 1 MHz  
Vds = 28.0 V, Vgs = 0V, F = 1 MHz  
Vds = 28.0 V, Vgs = 0V, F = 1 MHz  
Crss  
3
pF  
Coss  
45  
pF  
REVISION 8/31/99  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com  

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