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LX5506BLQ

更新时间： 2024-11-10 21:55:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
7页 200K
描述
InGaP HBT 4 6GHz Power Amplifier

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中文翻译

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LX5506BLQ 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：compliant
风险等级：5.1Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：21 dB最大输入功率 (CW)：15 dBm
JESD-609代码：e3最大工作频率：6000 MHz
最小工作频率：4000 MHz最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：WIDE BAND MEDIUM POWER
端子面层：Matte Tin (Sn)Base Number Matches：1

LX5506BLQ 数据手册

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LX5506B  
®
InGaP HBT 4 – 6GHz Power Amplifier  
TM  
P
RODUCTION DATA SHEET  
KEY FEATURES  
DESCRIPTION  
ƒ Advanced InGaP HBT  
The LX5506B is a power amplifier supply of 3.3V (nominal), with  
optimized for the FCC Unlicensed +26dBm of P1dB and up to 25dB  
National Information Infrastructure power gain in the 5.15 - 5.85GHz  
(U-NII) band, HyperLAN2 and Japan frequency range with a simple output  
WLAN applications in the 4.9-5.85 matching capacitor pair.  
ƒ Single-Polarity Voltage Supply  
ƒ EVM ~ 2.5% at Pout=+18dBm,  
64QAM/ 54Mbps OFDM (3.3V)  
ƒ Power Gain ~ 25dB at 5.25GHz  
& Pout=+18dBm  
GHz frequency range. The PA is  
LX5506B is available in a 16-pin  
ƒ Power Gain ~ 21dB at 5.85GHz  
& Pout=+18dBm  
implemented as three-stage 3mmx3mm micro-lead package (MLP).  
a
monolithic microwave integrated The compact footprint, low profile, and  
circuit (MMIC) with active bias, on- excellent thermal capability of the MLP  
chip input matching and output pre- package makes the LX5506B an ideal  
matching. It also features an on-chip solution for broadband, high-gain  
output power detector to help reduce power amplifier requirements for IEEE  
BOM cost and PCB board space for 802.11a, and HiperLAN2 portable  
system implementations. The device is WLAN applications.  
ƒ P1dB ~ +26dBm across 5.15 –  
5.85 GHz  
ƒ Total Current ~ 170mA for  
Pout=+18dBm at 5.25GHz  
ƒ Total Current ~ 200mA for  
Pout=+20dBm at 5.25GHz  
ƒ ACPR ~ -48dBc at 30MHz  
Offset at Pout=+18dBm  
ƒ Integrated Power Detector  
ƒ Complete On-Chip Input Match  
ƒ Simple Output Capacitor Match  
ƒ Small Footprint: 3x3mm2  
ƒ Low Profile: 0.9mm  
manufactured with an InGaP/GaAs  
Heterojunction Bipolar Transistor  
(HBT) IC process (MOCVD).  
It  
operates with a single positive voltage  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
PRODUCT HIGHLIGHT  
APPLICATIONS/BENEFITS  
ƒ FCC U-N11 Wireless  
ƒ IEEE 802.11a  
ƒ HiperLAN2  
PACKAGE ORDER INFO  
Plastic MLPQ  
LQ  
16-Pin  
RoHS Compliant / Pb-free  
LX5506BLQ  
Note: Available in Tape & Reel. Append the letters “TR” to the part number.  
(i.e. LX5506BLQ-TR)  
This device is classified as ESD Level 0 in accordance with MIL-STD-883,  
Method 3015 (HBM) testing. Appropriate ESD procedures should be  
observed when handling this device.  
Copyright © 2003  
Rev. 1.0b, 2005-03-02  
Microsemi  
Integrated Products Division  
Page 1  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
1234567

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与LX5506BLQ相关器件

型号 品牌 获取价格 描述 数据表
LX5506B-LQ MICROSEMI

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 		4000MHz - 6000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, LEAD FREE, PLAS
LX5506B-LQTR MICROSEMI

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 		4000MHz - 6000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, LEAD FREE, PLAS
LX5506BLQ-TR MICROSEMI

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 		Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, LEAD FREE, PLASTIC,
LX5506E MICROSEMI

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 		InGaP HBT 4 ?6GHz Power Amplifier
LX5506ELQ ETC

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 		Wireless LAN Power Amplifier
LX5506E-LQ MICROSEMI

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 		InGaP HBT 4 ?6GHz Power Amplifier
LX5506E-LQT MICROSEMI

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 		Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, PLASTIC, MLPQ-16
LX5506ELQ-TR MICROSEMI

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 		Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, ROHS COMPLIANT, PLAS
LX5506LQ MICROSEMI

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 		Wide Band Medium Power Amplifier, 4500MHz Min, 6000MHz Max, 3 X 3 MM, ROHS COMPLIANT, PLAS
LX5506-LQT MICROSEMI

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 		Wide Band Medium Power Amplifier, 4500MHz Min, 6000MHz Max, 1 Func, BIPolar, 3 X 3 MM, PLA

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