LX5506B

更新时间： 2024-11-10 21:55:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		放大器功率放大器
页数	文件大小	规格书
7页	200K
描述
InGaP HBT 4 6GHz Power Amplifier

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LX5506B 数据手册

LX5506B

InGaP HBT 4 – 6GHz Power Amplifier

RODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

Advanced InGaP HBT

The LX5506B is a power amplifier supply of 3.3V (nominal), with

optimized for the FCC Unlicensed +26dBm of P1dB and up to 25dB

National Information Infrastructure power gain in the 5.15 - 5.85GHz

(U-NII) band, HyperLAN2 and Japan frequency range with a simple output

WLAN applications in the 4.9-5.85 matching capacitor pair.

Single-Polarity Voltage Supply

EVM ~ 2.5% at Pout=+18dBm,

64QAM/ 54Mbps OFDM (3.3V)

Power Gain ~ 25dB at 5.25GHz

& Pout=+18dBm

GHz frequency range. The PA is

LX5506B is available in a 16-pin

Power Gain ~ 21dB at 5.85GHz

& Pout=+18dBm

implemented as three-stage 3mmx3mm micro-lead package (MLP).

monolithic microwave integrated The compact footprint, low profile, and

circuit (MMIC) with active bias, on- excellent thermal capability of the MLP

chip input matching and output pre- package makes the LX5506B an ideal

matching. It also features an on-chip solution for broadband, high-gain

output power detector to help reduce power amplifier requirements for IEEE

BOM cost and PCB board space for 802.11a, and HiperLAN2 portable

system implementations. The device is WLAN applications.

P1dB ~ +26dBm across 5.15 –

5.85 GHz

Total Current ~ 170mA for

Pout=+18dBm at 5.25GHz

Total Current ~ 200mA for

Pout=+20dBm at 5.25GHz

ACPR ~ -48dBc at 30MHz

Offset at Pout=+18dBm

Integrated Power Detector

Complete On-Chip Input Match

Simple Output Capacitor Match

Small Footprint: 3x3mm2

Low Profile: 0.9mm

manufactured with an InGaP/GaAs

Heterojunction Bipolar Transistor

(HBT) IC process (MOCVD).

operates with a single positive voltage

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

PRODUCT HIGHLIGHT

APPLICATIONS/BENEFITS

FCC U-N11 Wireless

IEEE 802.11a

HiperLAN2

PACKAGE ORDER INFO

Plastic MLPQ

16-Pin

RoHS Compliant / Pb-free

LX5506BLQ

Note: Available in Tape & Reel. Append the letters “TR” to the part number.

(i.e. LX5506BLQ-TR)

This device is classified as ESD Level 0 in accordance with MIL-STD-883,

Method 3015 (HBM) testing. Appropriate ESD procedures should be

observed when handling this device.

Rev. 1.0b, 2005-03-02

Microsemi

Integrated Products Division

Page 1

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

12 3 4 5 6 7

中文翻译

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与LX5506B相关器件

型号	品牌	获取价格	描述	数据表
LX5506BLQ	MICROSEMI	获取价格	InGaP HBT 4 6GHz Power Amplifier
LX5506B-LQ	MICROSEMI	获取价格	4000MHz - 6000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, LEAD FREE, PLAS
LX5506B-LQTR	MICROSEMI	获取价格	4000MHz - 6000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, LEAD FREE, PLAS
LX5506BLQ-TR	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, LEAD FREE, PLASTIC,
LX5506E	MICROSEMI	获取价格	InGaP HBT 4 ?6GHz Power Amplifier
LX5506ELQ	ETC	获取价格	Wireless LAN Power Amplifier
LX5506E-LQ	MICROSEMI	获取价格	InGaP HBT 4 ?6GHz Power Amplifier
LX5506E-LQT	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, PLASTIC, MLPQ-16
LX5506ELQ-TR	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, ROHS COMPLIANT, PLAS
LX5506LQ	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4500MHz Min, 6000MHz Max, 3 X 3 MM, ROHS COMPLIANT, PLAS

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