LX5503E

更新时间： 2024-11-11 03:51:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		放大器功率放大器
页数	文件大小	规格书
9页	240K
描述
InGaP HBT 4 - 6GHz Power Amplifier

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LX5503E 数据手册

LX5503E

InGaP HBT 4 – 6GHz Power Amplifier

PRODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

Advanced InGaP HBT

4.9-5.85GHz Operation

Single-Polarity 3.3V Supply

Total Current ~ 150mA for

Pout=18dBm at 5.25GHz

P1dB ~ +26dBm across

4.9~5.85GHz

Power Gain ~ 21dB at 5.25GHz

& Pout=18dBm

Power Gain ~ 16dB at 5.85GHz

& Pout=18dBm

EVM ~ 3% for 64QAM/ 54Mbps

& Pout=18dBm

Excellent Temperature

Performance

Simple Input/Output Match

Minimal External Components

Optional low-cost LDO for

Optimal System Performance

Small Footprint: 3x3mm²

Low Profile: 0.9mm

The LX5503E is a power amplifier

For +18dBm OFDM output power

optimized for high-efficiency low- (64QAM, 54Mbps), the PA provides a

power applications in the FCC very low EVM (Error Vector Mag-

Unlicensed National Information nitude) of 3%, and consumes 150mA

Infrastructure (U-NII) band, Europe total DC current.

HyperLAN2, and Japan WLAN in the

The LX5503E is available in a 16-

4.9-5.85GHz frequency range. The pin 3x3mm²micro-lead package

PA is implemented as a two-stage (MLP). The compact footprint, low

monolithic microwave integrated profile, and excellent thermal capability

circuit (MMIC) with active bias and of the micro-lead package make the

input/output pre-matching. The device LX5503E an ideal solution for

is manufactured with an InGaP/GaAs broadband, medium-gain power amp-

Heterojunction Bipolar Transistor lifier requirements for IEEE 802.11a,

(HBT) IC process (MOCVD). It and HiperLAN2 portable WLAN

operates at a single supply of 3.3V applications.

with +26dBm of P1dB, and power

gain of 21dB between 4.9-5.35GHz

and 16dB up to 5.85GHz.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS/BENEFITS

FCC-UNII Wireless

IEEE 802.11a

HiperLAN2

PRODUCT HIGHLIGHT

PACKAGE ORDER INFO

Plastic MLPQ

16-Pin

LX5503ELQ

RoHS Compliant / Pb-free Transition DC: 0418

Note: Available in Tape & Reel. Append the letters “TR” to the

part number.

(i.e. LX5503ELQ-TR)

This device is classified as ESD Level 0 in accordance with

JESD22-A114-B, (HBM) testing. Appropriate ESD procedures

should be observed when handling this device.

Rev. 1.2d, 2005-08-18

Microsemi

Page 1

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

12 3 4 5 6 7...9

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与LX5503E相关器件

型号	品牌	获取价格	描述	数据表
LX5503ELQ	MICROSEMI	获取价格	InGaP HBT 4 - 6GHz Power Amplifier
LX5503E-LQ	MICROSEMI	获取价格	4000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, LEAD-FREE, PL
LX5503E-LQT	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, PLASTIC, MLPQ-16
LX5503ELQ-TR	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, LEAD-FREE, PLASTIC,
LX5503-ILQ	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 5150MHz Min, 5350MHz Max, PLASTIC LQ, 16 PIN
LX5503LQ	MICROSEMI	获取价格	Wireless LAN Power Amplifier
LX5503-LQ	MICROSEMI	获取价格	InGaP HBT 5-6GHz Power Amplifier
LX5503-LQT	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 5150MHz Min, 5850MHz Max, 3 X 3 MM, PLASTIC, MLPQ-16
LX5503LQ-TR	MICROSEMI	获取价格	InGaP HBT 5-6GHz Power Amplifier
LX5506	MICROSEMI	获取价格	InGaP HBT 4.5 - 6GHz Power Amplifier

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