LX5503

更新时间： 2024-11-10 22:46:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		放大器功率放大器
页数	文件大小	规格书
13页	478K
描述
InGaP HBT 5-6GHz Power Amplifier

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中文翻译

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LX5503 数据手册

LX5503

InGaP HBT 5-6GHz Power Amplifier

I N T E G R A T E D P R O D U C T S

PRODUCTION DATA SHEET

KEY FEATURES

DESCRIPTION

ꢀ Advanced InGaP HBT

ꢀ 5.15-5.85GHz Operation

ꢀ Single-Polarity 3.3V Supply

ꢀ Low Quiescent Current Icq

~100mA

The LX5503 is a power amplifier

optimized for the FCC Unlicensed (64QAM, 54Mbps), the PA provides a

National Information Infrastructure very

(U-NII) band and HiperLAN2 Magnitude) of 4%, and consumes less

applications in the 5.15-5.85GHz than 200mA total DC current.

For +18dBm OFDM output power

low

EVM

(Error-Vector

ꢀ P1dB ~ +25dBm across

5.15~5.85GHz

frequency range. The PA is im-

The LX5503 is available in a 16-pin

plemented as a two-stage monolithic 3mmx3mm micro-lead package (MLP).

microwave integrated circuit (MMIC) The compact footprint, low profile, and

with active bias and input/output pre- excellent thermal capability of the MLP

matching. The device is manufactured package makes the LX5503 an ideal

with an InGaP/GaAs Heterojunction solution for broadband, medium-gain

Bipolar Transistor (HBT) IC process power amplifier requirements for IEEE

(MOCVD). It operates at a single low 802.11a, and Hiperlan2 portable WLAN

voltage supply of 3.3V with +25dBm applications.

ꢀ Power Gain ~ 22dB at 5.25GHz

& Pout=18dBm

ꢀ Power Gain ~ 18dB at 5.85GHz

& Pout=18dBm

ꢀ Total Current < 200mA for

Pout=18dBm

ꢀ EVM ~ 4% for 64QAM/ 54Mbps

& Pout=18dBm

ꢀ Excellent Temperature

Performance

of P1dB and 22dB power gain

between 5.15-5.35GHz and 18dB gain

up to 5.85GHz.

ꢀ Simple Input/Output Match

ꢀ Minimal External Components

ꢀ Small Footprint: 3x3mm²

ꢀ Low Profile: 0.9mm

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS/BENEFITS

ꢀ FCC U-NII Wireless

ꢀ IEEE 802.11a

ꢀ HiperLAN2

PRODUCT HIGHLIGHT

PACKAGE ORDER INFO

Plastic

16-Pin

T_J(°C)

-40 to 85

LX5503-LQ

Note: Available in Tape & Reel (3K parts per reel).

Append the letter “T” to the part number.

(i.e. LX5503-LQT)

This device is classified as ESD Level 1 in accordance with MIL-

STD-883, Method 3015 (HBM) testing. Appropriate ESD procedures

should be observed when handling this device.

Microsemi

Page 1

Rev. 1.1, 9/16/2002

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

12 3 4 5 6 7...13

中文翻译

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与LX5503相关器件

型号	品牌	获取价格	描述	数据表
LX5503_05	MICROSEMI	获取价格	InGaP HBT 5-6GHz Power Amplifier
LX5503E	MICROSEMI	获取价格	InGaP HBT 4 - 6GHz Power Amplifier
LX5503ELQ	MICROSEMI	获取价格	InGaP HBT 4 - 6GHz Power Amplifier
LX5503E-LQ	MICROSEMI	获取价格	4000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, LEAD-FREE, PL
LX5503E-LQT	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, PLASTIC, MLPQ-16
LX5503ELQ-TR	MICROSEMI	获取价格	Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, LEAD-FREE, PLASTIC,
LX5503-ILQ	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 5150MHz Min, 5350MHz Max, PLASTIC LQ, 16 PIN
LX5503LQ	MICROSEMI	获取价格	Wireless LAN Power Amplifier
LX5503-LQ	MICROSEMI	获取价格	InGaP HBT 5-6GHz Power Amplifier
LX5503-LQT	MICROSEMI	获取价格	Narrow Band Medium Power Amplifier, 5150MHz Min, 5850MHz Max, 3 X 3 MM, PLASTIC, MLPQ-16

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