是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | HERMETIC SEALED, CERDIP-8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.79 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.00095 µA | 25C 时的最大偏置电流 (IIB): | 0.00015 µA |
标称共模抑制比: | 130 dB | 频率补偿: | YES |
最大输入失调电压: | 10 µV | JESD-30 代码: | R-GDIP-T8 |
JESD-609代码: | e0 | 低-偏置: | YES |
低-失调: | YES | 负供电电压上限: | -9 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5/+-5 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
标称压摆率: | 10 V/us | 子类别: | Operational Amplifiers |
最大压摆率: | 5.5 mA | 供电电压上限: | 9 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 1500 kHz |
最小电压增益: | 1778000 | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
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