是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | SOIC | 包装说明: | SOP, SOP8,.25 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.09 | Is Samacsys: | N |
高边驱动器: | YES | 接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.9 mm | 湿度敏感等级: | 1 |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 235 |
电源: | 4.5/18 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 子类别: | MOSFET Drivers |
最大供电电压: | 18 V | 最小供电电压: | 4.5 V |
标称供电电压: | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 | 断开时间: | 60 µs |
接通时间: | 2000 µs | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LTC1155IS8#PBF | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range | |
LTC1155IS8#TR | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range | |
LTC1155IS8#TRPBF | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range | |
LTC1155M | Linear |
获取价格 |
Dual High Side Micropower MOSFET Driver | |
LTC1155MJ8 | Linear |
获取价格 |
Dual High Side Micropower MOSFET Driver | |
LTC1155MJ8/883B | Linear |
获取价格 |
IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8, HERMETIC SEALED, CERDIP-8, MOSFET Dri | |
LTC1156 | Linear |
获取价格 |
Quad High Side Micropower MOSFET Driver with Internal Charge Pump | |
LTC1156 | ADI |
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具内部充电泵的四通道、高压侧微功率 MOSFET 驱动器 | |
LTC1156C | Linear |
获取价格 |
Quad High Side Micropower MOSFET Driver with Internal Charge Pump | |
LTC1156CN | Linear |
获取价格 |
Quad High Side Micropower MOSFET Driver with Internal Charge Pump |