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LTC1155IN8 PDF预览

LTC1155IN8

更新时间： 2024-09-23 22:17:27
品牌 Logo 应用领域
凌特 - Linear 驱动器
页数 文件大小 规格书
16页 344K
描述
Dual High Side Micropower MOSFET Driver

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中文翻译

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LTC1155IN8 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：DIP包装说明：DIP, DIP8,.3
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.11高边驱动器：YES
接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码：R-PDIP-T8
JESD-609代码：e0湿度敏感等级：1
功能数量：2端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：4.5/18 V认证状态：Not Qualified
座面最大高度：3.937 mm子类别：MOSFET Drivers
最大供电电压：18 V最小供电电压：4.5 V
标称供电电压：5 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：60 µs
接通时间：2000 µs宽度：7.62 mm
Base Number Matches：1

LTC1155IN8 数据手册

 浏览型号LTC1155IN8的Datasheet PDF文件第2页浏览型号LTC1155IN8的Datasheet PDF文件第3页浏览型号LTC1155IN8的Datasheet PDF文件第4页浏览型号LTC1155IN8的Datasheet PDF文件第5页浏览型号LTC1155IN8的Datasheet PDF文件第6页浏览型号LTC1155IN8的Datasheet PDF文件第7页 
LTC1155  
Dual High Side  
Micropower MOSFET Driver  
U
DESCRIPTIO  
EATURE  
S
F
The LTC®1155 dual high side gate driver allows using low  
cost N-channel FETs for high side switching applications.  
An internal charge pump boosts the gate above the posi-  
tive rail, fully enhancing an N-channel MOSFET with no  
external components. Micropower operation, with 8µA  
standbycurrentand85µAoperatingcurrent, allowsusein  
virtually all systems with maximum efficiency.  
■
■
■
■
■
■
■
■
■
■
Fully Enhances N-Channel Power MOSFETs  
8µA Standby Current  
85µA ON Current  
Short-Circuit Protection  
Wide Power Supply Range: 4.5V to 18V  
Controlled Switching ON and OFF Times  
No External Charge Pump Components  
Replaces P-Channel High Side MOSFETs  
Compatible with Standard Logic Families  
Available in 8-Pin SO Package  
Included on-chip is overcurrent sensing to provide auto-  
matic shutdown in case of short circuits. A time delay can  
be added in series with the current sense to prevent false  
triggering on high in-rush loads such as capacitors and  
incandescent lamps.  
O U  
PPLICATI  
S
A
■
■
■
■
■
■
■
The LTC1155 operates off of a 4.5V to 18V supply input  
and safely drives the gates of virtually all FETs. The  
LTC1155 is well suited for low voltage (battery-powered)  
applications, particularly where micropower “sleep” op-  
eration is required.  
Laptop Power Bus Switching  
SCSI Termination Power Switching  
Cellular Phone Power Management  
P-Channel Switch Replacement  
Relay and Solenoid Drivers  
Low Frequency Half H-Bridge  
Motor Speed and Torque Control  
The LTC1155 is available in both 8-pin PDIP and 8-pin SO  
packages.  
, LTC and LT are registered trademarks of Linear Technology Corporation.  
U
O
TYPICAL APPLICATI  
Laptop Computer Power Bus Switch with Short Circuit Protection  
V
= 4.5V TO 5.5V  
S
Switch Voltage Drop  
+
C
C
DLY  
R
R
SEN  
DLY  
SEN  
0.02Ω  
10µF  
0.1µF  
0.1µF  
0.02Ω  
0.25  
0.20  
0.15  
0.10  
R
R
100k  
DLY  
100k  
DLY  
DS1  
G1  
V
DS2  
S
*IRLR034  
*IRLR034  
G2  
LTC1155  
GND  
5A  
MAX  
5A  
MAX  
TTL, CMOS INPUT  
IN1  
IN2  
TTL, CMOS INPUT  
POWER BUS  
0.05  
0.00  
µP  
SYSTEM  
DISK  
DRIVE  
PRINTER,  
ETC.  
DISPLAY  
0
1
2
3
OUTPUT CURRENT (A)  
GND  
1155 TA02  
1155 TA01  
*SURFACE MOUNT  
1
1234567...16

中文翻译

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