是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | HERMETIC SEALED, DIP-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.11 |
Is Samacsys: | N | 高边驱动器: | YES |
接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码: | R-GDIP-T8 |
JESD-609代码: | e0 | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | CERAMIC, GLASS-SEALED | |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 4.5/18 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
子类别: | MOSFET Drivers | 最大供电电压: | 18 V |
最小供电电压: | 4.5 V | 标称供电电压: | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 60 µs | 接通时间: | 1000 µs |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LTC1155CN8 | Linear |
获取价格 |
Dual High Side Micropower MOSFET Driver | |
LTC1155CN8#PBF | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: PDIP; Pins: 8; Temperature Ran | |
LTC1155CS8 | Linear |
获取价格 |
Dual High Side Micropower MOSFET Driver | |
LTC1155CS8#PBF | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range | |
LTC1155CS8#TR | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range | |
LTC1155CS8#TRPBF | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range | |
LTC1155I | Linear |
获取价格 |
Dual High Side Micropower MOSFET Driver | |
LTC1155IN8 | Linear |
获取价格 |
Dual High Side Micropower MOSFET Driver | |
LTC1155IN8#PBF | Linear |
获取价格 |
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: PDIP; Pins: 8; Temperature Ran | |
LTC1155IS8 | Linear |
获取价格 |
Dual High Side Micropower MOSFET Driver |