Datasheet > LT3014

LT3014

更新时间： 2024-11-06 03:52:15

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	23K
描述
NPN SILICON RF POWER TRANSISTOR

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LT3014 数据手册

LT3014

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI LT3014 is a Common

Emitter Device Designed for General

Purpose Class A and AB Amplifier

Applications up to 1.0 GHz.

FEATURES INCLUDE:

· Gold Metalization

· Emitter Ballasting

· High Gain

PACKAGE STYLE .280 4L STUD

MAXIMUM RATINGS

I_C

300 mA

V_CB

P_DISS

T_J

45 V

5.0 W @ T_C= 25 ^OC

-55 ^OC to +200 ^OC

33.0 ^OC/W

T_STG

q_JC

1 = COLLECTOR

2 & 4 = EMITTER

3 = BASE

CHARACTERISTICS T_C= 25 ^OC

NONE

SYMBOL

BV_CEO

BV_CES

BV_EBO

h_FE

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

V_BE= 0 V

I_C= 10 mA

I_E= 1.0 mA

V_CE= 5.0 V

V_CE= 20 V

3.5

I_C= 100 mA

ICQ = 150 mA

200

3.0

---

f = 1.0 GHz

3.0

3.5

GHz

dBm

P1dB

IP3

dBm

POUT = 10 dBm (2 EQUAL TONES)

C_ob

f_t

V_CB= 28 V

V_CE= 20 V

f = 1.0 MHz

2.0

3.5

ICQ = 150 mA

f = 1.0 GHz

3.0

GHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

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