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LT1169

更新时间： 2024-09-24 22:55:47
品牌 Logo 应用领域
凌特 - Linear 运算放大器
页数 文件大小 规格书
12页 336K
描述
Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp

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中文翻译

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LT1169 数据手册

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LT1169  
Dual Low Noise,  
Picoampere Bias Current,  
JFET Input Op Amp  
U
DESCRIPTIO  
EATURE  
S
F
■
Input Bias Current, Warmed Up: 20pA Max  
100% Tested Low Voltage Noise: 8nV/√Hz Max  
S8 and N8 Package Standard Pinout  
Very Low Input Capacitance: 1.5pF  
Voltage Gain: 1.2 Million Min  
TheLT1169achievesanew standardofexcellencein noise  
performance for a dual JFET op amp. For the first time low  
voltage noise (6nV/√Hz) is simultaneously offered with  
extremely low current noise (1fA/√Hz), providing the low-  
est total noise for high impedance transducer applications.  
Unlike most JFET op amps, the very low input bias current  
(5pA Typ) is maintained over the entire common mode  
range which results in an extremely high input resistance  
(1013Ω). When combined with a very low input capaci-  
tance (1.5pF) an extremely high input impedance results,  
making the LT1169 the first choice for amplifying low level  
signals from high impedance transducers. The low input  
capacitancealsoassureshighgainlinearitywhenbuffering  
AC signals from high impedance transducers.  
■
■
■
■
■
■
■
■
■
Offset Voltage: 2mV Max  
Input Resistance: 1013Ω  
Gain-Bandwidth Product: 5.3MHz Typ  
Guaranteed Specifications with ±5V Supplies  
Guaranteed Matching Specifications  
O U  
PPLICATI  
A
S
■
■
■
■
Photocurrent Amplifiers  
Hydrophone Amplifiers  
High Sensitivity Piezoelectric Accelerometers  
Low Voltage and Current Noise Instrumentation  
Amplifier Front Ends  
Two and Three Op Amp Instrumentation Amplifiers  
Active Filters  
TheLT1169isunconditionallystableforgainsof1ormore,  
even with 1000pF capacitive loads. Other key features are  
0.6mV VOS and a voltage gain over 4 million. Each indi-  
vidual amplifier is 100% tested for voltage noise, slew rate  
(4.2V/µs), and gain-bandwidth product (5.3MHz).  
■
■
The LT1169 is offered in the S8 and N8 packages.  
A full set of matching specifications are provided for  
precision instrumentation amplifier front ends. Specifica-  
tions at ±5V supply operation are also provided. For an  
evenlowervoltagenoisepleaseseetheLT1113datasheet.  
, LTC and LT are registered trademarks of Linear Technology Corporation.  
U
O
TYPICAL APPLICATI  
Low Noise Light Sensor with DC Servo  
1kHz Output Voltage Noise  
Density vs Source Resistance  
C1  
2pF  
10k  
–
R1  
–
2
V
N
1M  
1k  
100  
10  
+
1
1/2 LT1169  
C2  
V
OUT  
R
SOURCE  
+
3
0.022µF  
D2  
1N914  
C
D
+V  
8
R2  
100k  
–
6
D1  
1N914  
R3  
1k  
V
N
7
SOURCE  
2N3904  
1/2 LT1169  
T
= 25°C  
= ±15V  
A
S
RESISTANCE  
ONLY  
+
5
V
HAMAMATSU  
R5  
10k 1k  
R4  
1
100  
4
–V  
S1336-5BK  
1k 10k 100k 1M 10M  
1G  
100M  
(908) 231-0960  
R2C2 > C1R1  
SOURCE RESISTANCE (Ω)  
C
V
= PARASITIC PHOTODIODE CAPACITANCE  
D
2
2
V
=
√
(V  
OP AMP  
)
+ 4kTR + 2qI R  
= 100mV/µWATT FOR 200nm WAVE LENGTH  
N
S
B
S
V–  
OUT  
LT1169 • TA01  
330mV/µWATT FOR 633nm WAVE LENGTH  
LT1169 • TA02  
1
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