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LT1126MJ8#TRPBF PDF预览

LT1126MJ8#TRPBF

更新时间： 2024-11-26 13:09:31
品牌 Logo 应用领域
凌特 - Linear 运算放大器
页数 文件大小 规格书
12页 267K
描述
IC DUAL OP-AMP, 250 uV OFFSET-MAX, 65 MHz BAND WIDTH, CDIP8, 0.300 INCH, LEAD FREE, HERMETIC, CERAMIC, DIP-8, Operational Amplifier

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LT1126MJ8#TRPBF 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP,
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.62Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB)：0.07 µA
标称共模抑制比：120 dB最大输入失调电压：250 µV
JESD-30 代码：R-GDIP-T8JESD-609代码：e3
长度：10.287 mm负供电电压上限：-22 V
标称负供电电压 (Vsup)：-15 V功能数量：2
端子数量：8最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, GLASS-SEALED
封装代码：DIP封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
座面最大高度：5.08 mm标称压摆率：10 V/us
子类别：Operational Amplifier供电电压上限：22 V
标称供电电压 (Vsup)：15 V表面贴装：NO
技术：BIPOLAR温度等级：MILITARY
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：65000 kHz
宽度：7.62 mmBase Number Matches：1

LT1126MJ8#TRPBF 数据手册

 浏览型号LT1126MJ8#TRPBF的Datasheet PDF文件第2页浏览型号LT1126MJ8#TRPBF的Datasheet PDF文件第3页浏览型号LT1126MJ8#TRPBF的Datasheet PDF文件第4页浏览型号LT1126MJ8#TRPBF的Datasheet PDF文件第5页浏览型号LT1126MJ8#TRPBF的Datasheet PDF文件第6页浏览型号LT1126MJ8#TRPBF的Datasheet PDF文件第7页 
LT1126/LT1127  
Dual/Quad  
Decompensated Low Noise,  
High Speed Precision Op Amps  
U
FEATURES  
DESCRIPTIO  
The LT®1126 dual and LT1127 quad are high perfor-  
mance, decompensated op amps that offer higher slew  
rate and bandwidth than the LT1124 dual and the LT1125  
quad operational amplifiers. The enhanced AC perfor-  
mance is available without degrading DC specs of the  
LT1124/LT1125. Both LT1126/LT1127 are stable in a gain  
of 10 or more.  
■
100% Tested Low Voltage Noise: 2.7nV/√Hz Typ,  
4.2nV/√Hz Max  
■
Slew Rate: 11V/µs Typ  
■
Gain-Bandwidth Product: 65MHz Typ  
Offset Voltage, Prime Grade: 70µV Max  
■
Low Grade: 100µV Max  
■
High Voltage Gain: 5 Million Min  
■
Supply Current Per Amplifier: 3.1mA Max  
In the design, processing and testing of the device, par-  
ticular attention has been paid to the optimization of the  
entire distribution of several key parameters. Slew rate,  
gain-bandwidth and 1kHz noise are 100% tested for each  
individual amplifier. Consequently, the specifications of  
eventhelowestcostgrades(theLT1126CandtheLT1127C)  
have been enhanced.  
■
Common Mode Rejection: 112dB Min  
Power Supply Rejection: 116dB Min  
Available in 8-Lead SOIC, 8-Lead DIP, 16-Lead SO  
and 14-Lead DIP Packages  
■
■
U
APPLICATIO S  
■
Two and Three Op Amp Instrumentation Amplifiers  
Power consumption of the dual LT1126 is less than one  
halfoftwoOP-37s.Lowpowerandhighperformanceinan  
8-pin SO package makes the LT1126 a first choice for  
surface mounted systems and where board space is  
restricted.  
■
Low Noise Signal Processing  
■
Active Filters  
■
Microvolt Accuracy Threshold Detection  
■
Strain Gauge Amplifiers  
■
Direct Coupled Audio Gain Stages  
■
, LTC and LT are registered trademarks of Linear Technology Corporation. All other  
trademarks are the property of their respective owners. Protected by U.S. Patents including  
4775884, 4837496.  
Tape Head Preamplifiers  
■
Microphone Preamplifiers  
■
Accelerometer Amplifiers  
■
Infrared Detectors  
U
TYPICAL APPLICATIO  
Low Noise, Wide Bandwidth Instrumentation Amplifier  
Voltage Noise vs Frequency  
100  
– INPUT  
+
V
A
= ±15V  
= 25°C  
620Ω  
10k  
S
1/4  
T
LT1127  
–
30  
6.2k  
10  
3
200Ω  
MAXIMUM  
TYPICAL  
–
1/4  
LT1127  
6.2k  
–
OUTPUT  
620Ω  
1/4  
LT1127  
1/f CORNER  
2.3Hz  
+
+ INPUT  
+
1
0.1  
10k  
1.0  
10  
FREQUENCY (Hz)  
100  
1000  
1126-7 TA01b  
GAIN = 1000, BANDWIDTH = 480kHz  
INPUT REFERRED NOISE = 4.5nV/ Hz AT 1kHz, 6µV  
1126-7 TA01  
OVER BANDWIDTH  
√
RMS  
11267fa  
1
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