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LT1126MJ8#PBF PDF预览

LT1126MJ8#PBF

更新时间: 2024-11-26 21:06:27
品牌 Logo 应用领域
凌特 - Linear 放大器
页数 文件大小 规格书
12页 275K
描述
IC DUAL OP-AMP, 250 uV OFFSET-MAX, 65 MHz BAND WIDTH, CDIP8, 0.300 INCH, LEAD FREE, HERMETIC, CERAMIC, DIP-8, Operational Amplifier

LT1126MJ8#PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.62放大器类型:OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB):0.07 µA标称共模抑制比:120 dB
最大输入失调电压:250 µVJESD-30 代码:R-GDIP-T8
JESD-609代码:e3长度:10.287 mm
负供电电压上限:-22 V标称负供电电压 (Vsup):-15 V
功能数量:2端子数量:8
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:5.08 mm
标称压摆率:10 V/us子类别:Operational Amplifier
供电电压上限:22 V标称供电电压 (Vsup):15 V
表面贴装:NO技术:BIPOLAR
温度等级:MILITARY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:65000 kHz宽度:7.62 mm
Base Number Matches:1

LT1126MJ8#PBF 数据手册

 浏览型号LT1126MJ8#PBF的Datasheet PDF文件第2页浏览型号LT1126MJ8#PBF的Datasheet PDF文件第3页浏览型号LT1126MJ8#PBF的Datasheet PDF文件第4页浏览型号LT1126MJ8#PBF的Datasheet PDF文件第5页浏览型号LT1126MJ8#PBF的Datasheet PDF文件第6页浏览型号LT1126MJ8#PBF的Datasheet PDF文件第7页 
LT1126/LT1127  
Dual/Quad  
Decompensated Low Noise,  
High Speed Precision Op Amps  
U
FEATURES  
DESCRIPTIO  
The LT®1126 dual and LT1127 quad are high perfor-  
mance, decompensated op amps that offer higher slew  
rate and bandwidth than the LT1124 dual and the LT1125  
quad operational amplifiers. The enhanced AC perfor-  
mance is available without degrading DC specs of the  
LT1124/LT1125. Both LT1126/LT1127 are stable in a gain  
of 10 or more.  
100% Tested Low Voltage Noise: 2.7nV/Hz Typ,  
4.2nV/Hz Max  
Slew Rate: 11V/µs Typ  
Gain-Bandwidth Product: 65MHz Typ  
Offset Voltage, Prime Grade: 70µV Max  
Low Grade: 100µV Max  
High Voltage Gain: 5 Million Min  
Supply Current Per Amplifier: 3.1mA Max  
In the design, processing and testing of the device, par-  
ticular attention has been paid to the optimization of the  
entire distribution of several key parameters. Slew rate,  
gain-bandwidth and 1kHz noise are 100% tested for each  
individual amplifier. Consequently, the specifications of  
eventhelowestcostgrades(theLT1126CandtheLT1127C)  
have been enhanced.  
Common Mode Rejection: 112dB Min  
Power Supply Rejection: 116dB Min  
Available in 8-Lead SOIC, 8-Lead DIP, 16-Lead SO  
and 14-Lead DIP Packages  
U
APPLICATIO S  
Two and Three Op Amp Instrumentation Amplifiers  
Power consumption of the dual LT1126 is less than one  
halfoftwoOP-37s.Lowpowerandhighperformanceinan  
8-pin SO package makes the LT1126 a first choice for  
surface mounted systems and where board space is  
restricted.  
Low Noise Signal Processing  
Active Filters  
Microvolt Accuracy Threshold Detection  
Strain Gauge Amplifiers  
Direct Coupled Audio Gain Stages  
, LTC and LT are registered trademarks of Linear Technology Corporation. All other  
trademarks are the property of their respective owners. Protected by U.S. Patents including  
4775884, 4837496.  
Tape Head Preamplifiers  
Microphone Preamplifiers  
Accelerometer Amplifiers  
Infrared Detectors  
U
TYPICAL APPLICATIO  
Low Noise, Wide Bandwidth Instrumentation Amplifier  
Voltage Noise vs Frequency  
100  
– INPUT  
+
V
A
= ±15V  
= 25°C  
620  
10k  
S
1/4  
T
LT1127  
30  
6.2k  
10  
3
200Ω  
MAXIMUM  
TYPICAL  
1/4  
LT1127  
6.2k  
OUTPUT  
620Ω  
1/4  
LT1127  
1/f CORNER  
2.3Hz  
+
+ INPUT  
+
1
0.1  
10k  
1.0  
10  
FREQUENCY (Hz)  
100  
1000  
1126-7 TA01b  
GAIN = 1000, BANDWIDTH = 480kHz  
INPUT REFERRED NOISE = 4.5nV/ Hz AT 1kHz, 6µV  
1126-7 TA01  
OVER BANDWIDTH  
RMS  
11267fa  
1

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