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LT1013DDR PDF预览

LT1013DDR

更新时间: 2024-11-03 22:46:55
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
30页 542K
描述
DUAL PRECISION OPERATIONAL AMPLIFIERS

LT1013DDR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:0.55Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:1856
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:D (R-PDSO-G8)
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.03 µA25C 时的最大偏置电流 (IIB):0.05 µA
最小共模抑制比:97 dB标称共模抑制比:114 dB
频率补偿:YES最大输入失调电流 (IIO):0.002 µA
最大输入失调电压:800 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
低-偏置:NO低-失调:NO
微功率:YES湿度敏感等级:1
负供电电压上限:-22 V标称负供电电压 (Vsup):-15 V
功能数量:2端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TR
峰值回流温度(摄氏度):260功率:NO
电源:5/+-15 V可编程功率:NO
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:0.2 V/us标称压摆率:0.4 V/us
子类别:Operational Amplifier最大压摆率:1.1 mA
供电电压上限:22 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:700 kHz最小电压增益:500000
宽带:NO宽度:3.91 mm
Base Number Matches:1

LT1013DDR 数据手册

 浏览型号LT1013DDR的Datasheet PDF文件第2页浏览型号LT1013DDR的Datasheet PDF文件第3页浏览型号LT1013DDR的Datasheet PDF文件第4页浏览型号LT1013DDR的Datasheet PDF文件第5页浏览型号LT1013DDR的Datasheet PDF文件第6页浏览型号LT1013DDR的Datasheet PDF文件第7页 
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SLOS018H − MAY 1988 − REVISED NOVEMBER 2004  
LT1013, LT1013D . . . D PACKAGE  
(TOP VIEW)  
D
Single-Supply Operation  
− Input Voltage Range Extends to Ground  
− Output Swings to Ground While Sinking  
Current  
1
2
3
4
8
7
6
5
1IN+  
1IN−  
1OUT  
V
CC−  
D
D
D
D
D
D
D
Input Offset Voltage  
− 150 µV Max at 25°C for LT1013A  
Offset-Voltage Temperature Coefficient  
− 2.5 µV/°C Max for LT1013A  
Input Offset Current  
− 0.8 nA Max at 25°C for LT1013A  
2IN+  
2IN−  
V
CC+  
2OUT  
LT1013, LT1013A . . . FK PACKAGE  
(TOP VIEW)  
High Gain . . . 1.5 V/µV Min (R = 2 k),  
L
0.8 V/µV Min (R = 600 k) for LT1013A  
L
3
2
1
20 19  
18  
NC  
NC  
4
5
6
7
8
Low Supply Current . . . 0.5 mA Max at  
2OUT  
NC  
1IN−  
NC  
17  
16  
15  
14  
T = 25°C for LT1013A  
A
Low Peak-to-Peak Noise Voltage . . . 0.55 µV  
Typ  
2IN−  
NC  
1IN+  
NC  
Low Current Noise . . . 0.07 pA/Hz Typ  
9 10 11 12 13  
description/ordering information  
The LT1013 devices are dual precision  
operational amplifiers, featuring high gain, low  
supply current, low noise, and low-offset-voltage  
temperature coefficient.  
NC − No internal connection  
LT1013, LT1013D . . . JG OR P PACKAGE  
(TOP VIEW)  
The LT1013 devices can be operated from a  
single 5-V power supply; the common-mode input  
voltage range includes ground, and the output can  
also swing to within a few millivolts of ground.  
Crossover distortion is eliminated. The LT1013  
can be operated with both dual 15-V and single  
5-V supplies.  
1OUT  
1IN−  
1IN+  
V
CC+  
1
2
3
4
8
7
6
5
2OUT  
2IN−  
2IN+  
V
CC−  
The LT1013C, LT1013AC, and LT1013D are characterized for operation from 0°C to 70°C. The LT1013I,  
LT1013AI, and LT1013DI are characterized for operation from −40°C to 105°C. The LT1013M, LT1013AM, and  
LT1013DM are characterized for operation over the full military temperature range of −55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2004, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

LT1013DDR 替代型号

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