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LSSBTH10T1G PDF预览

LSSBTH10T1G

更新时间: 2024-12-01 12:01:31
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
7页 550K
描述
VHF/UHF Transistors Pb-Free Package is Available.

LSSBTH10T1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
VHF/UHF Transistors  
z Pb-Free Package is Available.  
Ordering Information  
Device  
Marking  
A16  
Shipping  
LSSBTH10T1G  
3000/Tape&Reel  
LSSBTH10T1G  
10000/Tape&Reel  
LSSBTH10T3G  
A16  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
Value  
25  
Unit  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
SC-74  
V CBO  
30  
V EBO  
3.0  
(6)  
(5)  
(4)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
PD  
225  
1.8  
mW  
mW/°C  
°C/W  
(1)  
(2)  
(3)  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
556  
300  
2.4  
mW  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
°C/W  
°C  
TJ , Tstg  
–55 to +150  
DEVICE MARKING  
LSSBTH10T1G = A16  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I C = 1.0 mAdc, I B= 0 )  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
25  
30  
Vdc  
Vdc  
Vdc  
Collector–Base Breakdown Voltage  
(I C = 100 µAdc , I E = 0)  
Emitter–Base Breakdown Voltage  
(I E = 10 µAdc , I C= 0)  
3.0  
Collector Cutoff Current  
I CBO  
I EBO  
100  
100  
nAdc  
nAdc  
( V CB = 25Vdc , I E = 0 )  
Emitter Cutoff Current  
( V EB = 2.0Vdc , I C= 0 )  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
Rev.O 1/7  

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