Datasheet > LSF876C1

LSF876C1

更新时间： 2024-11-28 05:43:03

品牌	Logo	应用领域
MARKTECH		二极管
页数	文件大小	规格书
1页	183K
描述
Infrared Emitting Diode

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中文翻译

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数据手册

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LSF876C1 数据手册

Infrared Emitting Diode

LSF876C1

2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃)

I T E M

Power Output

SYMBOL

CONDITIONS

IF=50mA

MIN

8.0

TYP

18.0

MAX

UNIT

μA

Forward Voltage

Reverse Current

IF=50mA

VR=5V

1.5

1.8

Peak Wavelength

λp

Δλ

IF=50mA

870

Spectral Line Half Width

Half Intensity Beam Angle

±20

deg.

RELATIVE POWER vs FORWARD CURRENT

FORWARD I-V CHARACTERISTICS

250

200

150

100

120

100

FEATURES

･High-output Power

･Compact

･High Reliability

① Anode

② Cathode

APPLICATIONS ･Optical Switches

･Optical Sensors

Dimensions (Unit:mm)

100

125

FORWARD CURRENT(mA)

FORWARD VOLTAGE(V)

SPECTRAL OUTPUT

RADIATION PATTERN

THERMAL DERATING CURVE

120

100

120

1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

I T E M

SYMBOL

RATINGS

UNIT

100

Forward Current (DC)

Forward Current (Pulse)*1

Reverse Voltage

100

IFP

Power Dissipation

Operating Temp.

100

℃

Topr

Tstg

-20 TO 80

-30 TO 100

100

Storage Temp.

Junction Temp.

Lead Soldering Temp.*2

Tls

260

770

870

970

*1:Tw=10uS,T=10mS

-90

-60

-30

WAVELENGTH(nm)

-30

*2:Time 5 Sec max,Position:Up to 3mm from the body

BEAM ANGLE(deg.)

AMBIENT TEMPERATURE( )

To purchase this part contact

Marktech Optoelectronics at

OPTRANS

Marktech

Optoelectronics

www.marktechopto.com

800.984.5337

11/6/2009 LSF876C1.xls

中文翻译

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