Datasheet > LSF872C1S

LSF872C1S

更新时间： 2024-11-28 05:43:03

品牌	Logo	应用领域
MARKTECH		二极管
页数	文件大小	规格书
1页	56K
描述
Infrared Emitting Diode

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中文翻译

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LSF872C1S 数据手册

Infrared Emitting Diode

LSF872C1S

2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)

I T E M

Power Output

Forward Voltage

Reverse Current

Peak Wavelength

Spectral Line Half Width

Half Intensity Beam Angle

Junction Capacitance

Temp. Coefficient of PO

Temp. Coefficient of VF

CONDITIONS

IF=50mA

VR=5V

SYMBOL

MIN

14.0

TYP

17.0

1.55

MAX

20.0

2.0

UNIT

10 μA

λp IF=50mA

Δλ IF=50mA

870

±25

-0.3

-2.1

deg.

%/℃

mV/℃

IF=50mA

1MHz ,V=0V

IF=10mA

P/T

V/T

RELATIVE POWER vs FORWARD

CURRENT

RADIATION PATTERN

FORWARD I-V CHARACTERISTICS

120

100

250

200

150

100

① Anode

② Cathode

100

FEATURES

･High-output Power

･Compact

Dimensions (Unit:mm)

･High Reliability

APPLICATIONS ･Optical Switches

･Optical Sensors

-90 -60 -30

SPECTRAL OUTPUT

100

125

BEAM ANGLE(deg.)

FORWARD VOLTAGE(V)

FORWARD CURRENT(mA)

120

100

1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

POWER OUTPUT vs TEMPERATURE

IF=10mA

FORWARD VOLTAGE vs

TEMPERATURE

IF=10mA

I T E M

Forward Current (DC)

Forward Current (Pulse)*1

Reverse Voltage

RATINGS

SYMBOL

IFP

UNIT

THERMAL DERATING CURVE

140

120

100

120

100

1.6

1.5

1.4

1.3

1.2

1.1

0.5

Power Dissipation

Operating Temp.

Storage Temp.

100

℃

Topr

Tstg

-20 TO 85

-30 TO 100

100

Junction Temp.

Lead Soldering Temp.*2

*1:Tw=10uS,T=10mS

Tls

260

-30

770

870

970

-30

AMBIENT TEMPERATURE(℃)

WAVELENGTH(nm)

AMBIENT TEMPERATURE(℃)

*2:Time 5 Sec max,Position:Up to 3mm from the body

To purchase this part contact

Marktech Optoelectronics at

Marktech

OPTRANS

Optoelectronics

www.marktechopto.com

2006/5/24

800.984.5337

中文翻译

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