Datasheet > LSF830C1

LSF830C1

更新时间： 2024-11-26 05:43:03

品牌	Logo	应用领域
MARKTECH		二极管
页数	文件大小	规格书
1页	124K
描述
Infrared Emitting Diode

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中文翻译

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数据手册

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LSF830C1 数据手册

Infrared Emitting Diode

LSF830C1

2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)

I T E M

Power Output

Forward Voltage

Reverse Current

Peak Wavelength

SYMBOL

CONDITIONS

IF=20mA

VR=5V

MIN

TYP

2.5

MAX

2.1

UNIT

1.5

100 μA

λp IF=20mA

Δλ IF=20mA

830

±25

Spectral Line Half Width

Half Intensity Beam Angle

deg.

IF=20mA

FORWARD I-V CHARACTERISTICS

RELATIVE POWER vs FORWARD CURRENT

250

200

150

100

① Anode

② Cathode

FEATURES

･High-output Power

Dimensions (Unit:mm)

･Compact

･High Reliability

APPLICATIONS ･Optical Switches

･Optical Sensors

FORWARD CURRENT(mA)

FORWARD VOLTAGE(V)

SPECTRAL OUTPUT

THERMAL DERATING CURVE

RADIATION PATTERN

120

100

120

100

1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

I T E M

Forward Current (DC)

Forward Current (Pulse)*1

Reverse Voltage

RATINGS

SYMBOL

IFP

UNIT

0.5

Power Dissipation

Operating Temp.

Storage Temp.

100

℃

Topr

Tstg

-20 TO 85

-30 TO 100

100

-90

-60

-30

Junction Temp.

BEAM ANGLE(deg.)

AMBIENT TEMPERATURE(℃)

Lead Soldering Temp.*2

*1:Tw=10uS,T=10mS

Tls

260

730

830

930

WAVELENGTH(nm)

*2:Time 5 Sec max,Position:Up to 3mm from the body

To purchase this part contact

Marktech Optoelectronics at

Marktech

Optoelectronics

www.marktechopto.com

800.984.5337

OPTRANS

2008/6/9

中文翻译

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