Datasheet > LSF811C1

LSF811C1

更新时间： 2024-01-08 16:42:10

品牌	Logo	应用领域
MARKTECH		二极管
页数	文件大小	规格书
2页	45K
描述
Infrared Emitting Diode

阅读下载

中文翻译

获取价格

数据手册

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LSF811C1 数据手册

Infrared Emitting Diode

LSF811C1

①Anode

②Cathode

FEATURES

･High-output Power

･Compact

Dimensions (Unit:mm)

･High Reliability

APPLICATIONS ･Optical Switches

･Optical Sensors

･Medical Application

SPECTRAL OUTPUT

120

100

1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

I T E M

Forward Current (DC)

Forward Current (Pulse)*1

Reverse Voltage

Power Dissipation

Operating Temp.

SYMBOL RATINGS

UNIT

IFP

Topr

Tstg

0.5

120

℃

-20 TO 85

-30 TO 100

100

Storage Temp.

Junction Temp.

Lead Soldering Temp.*2

*1:Tw=10uS,T=10mS

Tls

260

710

810

910

WAVELENGTH(nm)

*2:Time 5 Sec max,Position:Up to 3mm from the body

To purchase this part contact

Marktech Optoelectronics at

Marktech

Optoelectronics

www.marktechopto.com

800.984.5337

中文翻译

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