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LS421 PDF预览

LS421

更新时间: 2024-02-23 21:28:06
品牌 Logo 应用领域
Linear Systems /
页数 文件大小 规格书
2页 27K
描述
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

LS421 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.32
配置:SEPARATE, 2 ELEMENTS最小漏源击穿电压:40 V
FET 技术:JUNCTION最大反馈电容 (Crss):1.5 pF
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON

LS421 数据手册

 浏览型号LS421的Datasheet PDF文件第2页 
LS421, LS422, LS423,  
LS424, LS425, LS426  
LOW LEAKAGE LOW DRIFT  
MONOLITHIC DUAL N-CHANNEL JFET  
Linear Integrated Systems  
FEATURES  
HIGH INPUT IMPEDANCE  
HIGH GAIN  
IG=0.25pA MAX  
gfs=120µmho MIN  
LOW POWER OPERATION  
VGS(off)=2V MAX  
ABSOLUTE MAXIMUM RATINGS NOTE 1  
S1  
G2  
C
4
@ 25°C (unless otherwise noted)  
G1  
S2  
3
5
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
-65° to +150°C  
+150°C  
D1  
D1  
D2  
2
6
Maximum Voltage and Current for Each Transistor NOTE 1  
D2  
1
7
S1  
G2  
-VGSS  
-VDSO  
-IG(f)  
Gate Voltage to Drain or Source  
Drain to Source Voltage  
Gate Forward Current  
40V  
TO-78  
BOTTOM VIEW  
40V  
G1  
S2  
10mA  
22 X 20 MILS  
Maximum Power Dissipation  
Device Dissipation @ Free Air - Total  
400mW @ +125°C  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS  
|VGS1-2 /T| max. Drift vs. Temperature  
10  
10  
2.0  
25  
15  
2.0  
40  
25  
2.0  
10  
10  
3.0  
25  
15  
40  
25  
µV/°C  
mV  
V
VDG= 10V ID= 30µA  
TA=-55°C to +125°C  
VDG=10V ID= 30µA  
|VGS1-2| max.  
VGS(off)  
Offset Voltage  
GATE VOLTAGE  
Pinchoff Voltage  
3.0  
2.9  
3.0  
2.9  
VDS=10V  
ID= 1nA  
VGS  
Operating Range  
Operating  
1.8  
.25  
250  
1.0  
1.0  
1.8  
.25  
250  
1.0  
1.0  
1.8  
.25  
250  
1.0  
1.0  
2.9  
V
pA  
pA  
pA  
nA  
VDG=10V  
VDG=10V  
TA= +125°C  
VDS= 0V  
ID= 30µA  
ID= 30µA  
IGmax.  
.500  
500  
3.0  
.500 .500  
-IGmax.  
-IGSSmax.  
-IGSSmax.  
High Temperature  
At Full Conduction  
High Temperature  
500  
3.0  
3.0  
500  
3.0  
3.0  
VGS= 20V  
3.0  
TA= +125°C  
SYMBOL  
BVGSS  
CHARACTERISTICS  
Breakdown Voltage  
MIN.  
40  
TYP.  
60  
MAX.  
UNITS  
CONDITIONS  
VDS= 0  
--  
--  
V
V
IG= 1nA  
ID= 0  
BVGGO  
Gate-to-Gate Breakdown  
40  
--  
IG= 1µA  
IS= 0  
TRANSCONDUCTANCE  
Yfss  
Yfs  
Full Conduction  
300  
120  
--  
1500  
350  
µmho VDS= 10V  
µmho VDG= 10V  
VGS= 0  
f= 1kHz  
f= 1kHz  
Typical Operation  
DRAIN CURRENT  
Full Conduction  
200  
ID= 30µA  
60  
60  
--  
--  
1000  
1800  
µA  
µA  
LS421-3  
LS424-6  
VDS= 10V VGS= 0  
IDSS  
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261  

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