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LS4150 PDF预览

LS4150

更新时间: 2024-11-16 05:42:59
品牌 Logo 应用领域
固锝 - GOOD-ARK 整流二极管开关
页数 文件大小 规格书
2页 89K
描述
Fast Switching Diode

LS4150 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.68
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
最大非重复峰值正向电流:4 A元件数量:1
最高工作温度:175 °C最大输出电流:0.3 A
最大重复峰值反向电压:50 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

LS4150 数据手册

 浏览型号LS4150的Datasheet PDF文件第2页 
LS4150  
Fast Switching Diode  
Features  
Silicon Epitaxial Planar Diode  
Electrical data identical with the device 1N4150  
Quadro Melf package  
Applications  
High speed switch and general purpose  
use in computer and industrial applications  
Mechanical Data  
Case:QuadroMELF Glass Case (SOD-80)  
Weight: approx. 34 mg  
Cathode Band Color: Black  
Absolute Maximum Ratings  
( Tamb=25oC unless otherwise specified )  
Parameter  
Test Condition  
Symbol  
VRRM  
VR  
Value  
50  
Unit  
V
Repetitive peak reverse voltage  
Reverse voltage  
50  
V
Peak forward surge current  
Forward current  
tp= 1 us  
IFSM  
IF  
4
A
mA  
mA  
mW  
600  
300  
500  
Average forward current  
Power dissipation  
V
R = 0  
IFAV  
PV  
Thermal Characteristics  
( Tamb=25oC unless otherwise specified )  
Parameter  
Test Condition  
Symbol  
Value  
Unit  
Junction ambient  
on PC board  
50 mm X 50mm X 1.6mm  
RthJA  
500  
K/W  
Junction temperature  
T
175  
oC  
oC  
j
Stroage temperature range  
Tstg  
-65 to +175  
Electrical Characteristics  
( Tamb=25oC unless otherwise specified )  
Parameter  
Test Condition  
Symbol  
Min.  
0.54  
0.66  
0.76  
0.82  
0.87  
Typ.  
Max.  
0.62  
0.74  
0.86  
0.92  
1.0  
Unit  
Forward voltage  
IF=1mA  
IF=10mA  
IF=50mA  
IF=100mA  
IF=200mA  
VR=50V  
VF  
V
Reverse current  
100  
100  
2.5  
nA  
IR  
VR=50V, T=150oC  
j
pF  
ns  
Diode capacitance  
VR=0, f=1MHz, VHF=50mV  
CD  
trr  
Reverse recovery time  
IF=IR=10 to 100mA,  
iR=0.1x IR, RL=100  
4
660  

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