Datasheet > LS4148_15

LS4148_15

更新时间： 2024-11-17 01:23:15

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描述
500mW High Speed SMD Switching Diode

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中文翻译

获取价格

数据手册

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LS4148_15 数据手册

LS4148/LS4448/LS914B

Taiwan Semiconductor

CREAT BY ART

Small Signal Product

500mW High Speed SMD Switching Diode

FEATURES

- Fast switching device (trr<4.0ns)

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free version and RoHS compliant

- All external surfaces are corrosion resistant and

leads are readily solderable

QUADRO Mini-MELF (LS34)

MECHANICAL DATA

- Case: QUADRO Mini-MELF Package

- High temperature soldering guaranteed : 270^oC/10s

- Polarity : Indicated by black cathode band

- Weight : 29 ± 2.5mg

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power Dissipation

500

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Peak Forward Surge Current

V_RSM

V_RRM

I_FSM

100

Non-Repetitive Peak Forward Current

Mean Forward Current

I_FM

450

°C/W

°C

I_O

150

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

R_θJA

300

(Note 1)

T_J, T_STG

-65 to +175

PARAMETER

MIN

100

MAX

SYMBOL

UNIT

I_R=100μA

V_(BR)

Reverse Breakdown Current

I_R=5μA

Forward Voltage

LS4448, LS914B

LS4148

I_F=5.0mA

I_F=10.0mA

I_F=100.0mA

V_R=20V

0.72

1.0

V_F

LS4448, LS914B

μA

I_R

Reverse Leakage Current

V_R=75V

5.0

4.0

Junction Capacitance

V_R=0, f=1.0MHz

(Note 2)

C_J

t_rr

Reverse Recovery Time

Note 1: Valid provided that electrodes are kept at ambient temperature

Note 2: Reverse recovery test conditions: I_F=10mA to I_R=1mA, R_L=100Ω, V_RR=6 V

Document Number: DS_S1501008

Version: E15

12 3 4

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