Datasheet > LS4148_09

LS4148_09

更新时间： 2024-09-28 05:42:59

品牌	Logo	应用领域
TSC		二极管开关
页数	文件大小	规格书
2页	102K
描述
500mW High Speed SMD Switching Diode

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数据手册

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LS4148_09 数据手册

LS4148/LS4448/LS914B

500mW High Speed SMD Switching Diode

Small Signal Diode

QUADRO Mini-MELF (LS34)

HERMETICALLY SEALED GLASS

Features

Fast switching device(Trr<4.0nS)

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

All External Surfaces are Corrosion Resistant and

Leads are Readily Solderable

Unit (mm)

Min Max

Unit (inch)

Min Max

Dimensions

Mechanical Data

Case : QUADRO Mini-MELF Package (JEDEC DO-213)

High temperature soldering guaranteed : 270°C/10s

Polarity : Indicated by cathode band

Weight : 29 ± 2.5 mg

3.30 3.70 0.130 0.146

1.40 1.60 0.055 0.063

0.25 0.40 0.010 0.016

1.25 1.40 0.049 0.055

1.80

0.071

Ordering Information

Part No.

LSxxxx L1

LSxxxx L0

Package

Packing

QUADRO Mini-MELF

2.5Kpcs / 7" Reel

QUADRO Mini-MELF 10Kpcs / 13" Reel

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

P^D

Value

Units

Power Dissipation

500

100

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Peak Forward Surge Current

V^RSM

V^RRM

I^FSM

Non-Repetitive Peak Forward Current

Mean Forward Current

I^FM

450

150

300

°C/W

°C

Thermal Resistance (Junction to Ambient) (Note 1)

Junction and Storage Temperature Range

RθJA

TJ, TSTG

-65 to + 200

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

100

IR=100uA

Reverse Breakdown Voltage

I^R=5uA

V(BR)

Forward Voltage

0.62

0.72

1.0

LS4448, LS914B

LS4148

I^F=5.0mA

IF=10.0mA

I^F=100.0mA

V^R=20V

LS4448, LS914B

μA

Reverse Leakage Current

5.0

4.0

V^R=75V

C^J

Junction Capacitance

V^R=0, f=1.0MHz

Trr

Reverse Recovery Time (Note 2)

Notes:1. Valid provided that electrodes are kept at ambient temperature

Notes:2. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

Version : C09

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