LS350 LS351 LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN
hFE 200 @ 10µA - 1mA
IVBE1-VBE2I=0.2mV TYP.
275 MHz TYP. @ 1mA
TIGHT VBE MATCHING
HIGH fT
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25 °C (unless otherwise stated)
IC
Collector Current
10mA
Maximum Temperatures
Storage Temperature
-55° to +150°C
Operating Junction Temperature -55° to +150°C
Top View
SOT-23 6 LEADS
Top View
TO-71 & TO-78
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE BOTH SIDES
250mW
500mW
2.3mW/°C
4.3mW/°C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC LS350 LS351 LS352
UNITS CONDITIONS
BVCBO
BVCEO
BVEBO
BVCCO
hFE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector to Collector Voltage
DC Current Gain
25
25
45
45
60
60
MIN.
MIN.
MIN.
MIN.
MIN.
V
V
V
V
IC = 10µA
IC = 1mA
IE = 10µA
IC = ±1µA
IC = 10µA
IE = 0
IB = 0
6.0
±25
100
6.0
±45
150
600
150
600
150
0.5
0.2
0.2
2
6.0
±80
200
IC = 0
NOTE 2
IE = 0 = IB = 0
VCE = 5V
600 MAX.
200 MIN.
600 MAX.
hFE
hFE
DC Current Gain
DC Current Gain
100
IC = 100µA
VCE = 5V
100
0.5
0.2
0.2
2
200
0.5
0.2
0.2
2
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
IC = 1mA,
IC = 1mA
IE = 0
VCE = 5V
IB = 0.1mA
VCB = NOTE 3
VEB = 3V
VCE(SAT) Collector Saturation Voltage
V
nA
nA
pF
ICBO
IEBO
COBO
CC1C2
IC1C2
fT
Collector Cutoff Current
Emitter Cutoff Current
IC = 0
Output Capacitance
IE = 0
VCB = 5V
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
2
2
2
pF
VCC = 0
1.0
200
3
1.0
200
3
1.0
200
3
µA
MHz
dB
VCC = NOTE 4
IC = 1mA
VCE = 5V
VCE = 5V
RG = 10K
NF
MAX.
IC = 100µA
BW = 200Hz
f = 1KHz
Linear Integrated Systems
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Doc 201119 06/15/2013 Rev#A5 ECN# LS350 LS351 LS352