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LS3250A-TO-78-6L PDF预览

LS3250A-TO-78-6L

更新时间: 2024-01-16 18:57:41
品牌 Logo 应用领域
凌特 - Linear /
页数 文件大小 规格书
2页 1392K
描述
Transistor,

LS3250A-TO-78-6L 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

LS3250A-TO-78-6L 数据手册

 浏览型号LS3250A-TO-78-6L的Datasheet PDF文件第2页 
LS3250 SERIES  
MONOLITHIC DUAL  
NPN TRANSISTORS  
*FEATURES  
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*  
TIGHT MATCHING1  
EXCELLENT THERMAL TRACKING1  
ABSOLUTE MAXIMUM RATINGS2  
@ 25 °C (unless otherwise stated)  
TO-78  
SOT-23  
TOP VIEW  
*
TOP VIEW  
2mV  
3µV/°C  
1
2
3
6
5
4
5
3
E2  
B2  
C2  
E1  
B1  
C1  
B1  
E2  
B2  
C1  
E1  
C2  
6
2
7
1
Maximum Temperatures  
Storage Temperature  
-55 to +150 °C  
-55 to +150 °C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Maximum Currents  
TO-71  
TOP VIEW  
PDIP  
SOIC  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
C1  
B1  
E1  
NC  
C1  
B1  
E1  
NC  
C2  
B2  
E2  
NC  
C2  
B2  
E2  
NC  
TBD  
50mA  
50V  
5
3
E2  
B2  
C2  
E1  
B1  
C1  
6
2
7
1
Collector Current  
Maximum Voltages  
Collector to Collector Voltage  
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
LS3250A  
LS3250B  
LS3250C  
SYMBOL  
CHARACTERISTIC  
UNIT CONDITIONS  
MIN MAX MIN MAX MIN MAX  
V
BE1 VBE2  
Base to Emitter Voltage Differential  
2
3
5
5
10  
15 µV/°C  
10 nA  
1.0 nA/°C  
mV  
IC = 10µA , VCE = 5V  
V
BE1 VBE2  
Base to Emitter Voltage Differential  
Change with Temperature  
IC = 10µA , VCE = 5V  
TA = -40°C to +85°C  
ΔT  
I
B1 IB2  
Base Current Differential  
10  
0.5  
10  
0.5  
IC = 10µA, VCE = 5V  
I
B1 IB2  
Base Current Differential  
Change with Temperature  
IC = 10µA, VCE = 5V  
TA = -40°C to +85°C  
ΔT  
h
FE1hFE2  
Current Gain Differential  
10  
10  
15  
%
IC = 1mA, VCE = 5V  
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
LS3250A  
LS3250B  
LS3250C  
SYMBOL  
CHARACTERISTIC  
UNIT CONDITIONS  
MIN MAX MIN MAX MIN MAX  
BVCBO  
BVCEO  
Collector to Base Breakdown Voltage  
45  
40  
40  
20  
20  
IC = 10µA , IE = 0A  
Collector to Emitter Breakdown Voltage 45  
IC = 10mA, IB = 0  
Collector to Collector Breakdown  
BVCCO  
±50  
±50  
6.0  
±50  
6.0  
V
IC = ±1µA, IE = IB= 0A  
Voltage  
BVEBO  
Emitter to Base Breakdown Voltage3  
6.0  
IE = 10µA, IC = 0A  
VCE(SAT)  
Collector to Emitter Saturation Voltage  
0.35  
0.35  
1.2  
IC = 10mA, IB = 1mA  
Linear Integrated Systems  
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
1/31/12 Rev#A4 ECN# LS 3250  

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