LS3250 SERIES
MONOLITHIC DUAL
NPN TRANSISTORS
Linear Integrated Systems
FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING1
2mV
3µV/°C
TO-78
SOT-23
TOP VIEW
EXCELLENT THERMAL TRACKING1
ABSOLUTE MAXIMUM RATINGS2
@ 25 °C (unless otherwise stated)
Maximum Temperatures
BOTTOM VIEW
1
2
3
6
5
4
B1
E2
B2
C1
E1
C2
3
1
5
7
E1
E2
2
6
B1
B2
C2
C1
Storage Temperature
-65 to +150 °C
-55 to +150 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
TO-71
PDIP
SOIC
BOTTOM VIEW
1
2
3
4
8
1
2
3
4
8
7
6
5
C1
B1
E1
NC
C1
C2
B2
C2
B2
E2
NC
TBD
50mA
80V
7
6
5
B1
3
1
5
7
E1
B1
C1
E2
E2 E1
NC NC
2
6
B2
C2
Collector to Collector Voltage
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS3250A
LS3250B
LS3250C
SYMBOL
CHARACTERISTIC
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
V
BE1 − VBE2
Base to Emitter Voltage Differential
2
3
5
5
10
15 µV/°C
10 nA
1.0 nA/°C
mV
IC = 10mA, VCE = 5V
V
BE1 − VBE2
∆T
Base to Emitter Voltage Differential
Change with Temperature
IC = 10mA, VCE = 5V
TA = -40°C to +85°C
I
I
B1 −IB2
Base Current Differential
10
0.5
10
0.5
IC = 10µA, VCE = 5V
B1 −IB2
Base Current Differential
Change with Temperature
IC = 10µA, VCE = 5V
TA = -40°C to +85°C
∆T
h
FE1hFE2
Current Gain Differential
10
10
15
%
IC = 10µA, VCE = 5V
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS3250A
LS3250B
LS3250C
SYMBOL
CHARACTERISTIC
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
BVCBO
BVCEO
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage 45
45
40
40
20
20
IC = 10mA, IE = 0A
IC = 10µA, IE = 0A
V
Collector to Collector Breakdown
BVCCO
80
80
80
Voltage
BVEBO
VCE(SAT)
Emitter to Base Breakdown Voltage3
Collector to Emitter Saturation Voltage
6.2
6.2
6.2
IE = 10µA, IC = 0A
IC = 100mA, IB = 10mA
0.25
0.25
1.2
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261