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LS311-PDIP-8L PDF预览

LS311-PDIP-8L

更新时间: 2024-11-15 15:37:59
品牌 Logo 应用领域
凌特 - Linear /
页数 文件大小 规格书
2页 300K
描述
Transistor,

LS311-PDIP-8L 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
风险等级:5.69最大集电极电流 (IC):0.01 A
配置:Single最小直流电流增益 (hFE):150
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):200 MHz
Base Number Matches:1

LS311-PDIP-8L 数据手册

 浏览型号LS311-PDIP-8L的Datasheet PDF文件第2页 
LS310 LS311 LS312 LS313  
MONOLITHIC DUAL  
NPN  
TRANSISTORS  
FEATURES  
VERY HIGH GAIN  
hFE≥200@10µA-1mA  
TIGHT VBE MATCHING  
HIGH fT  
|VBE1 -VBE1| = 0.2mV TYP.  
250MHz TYP. @ 1mA  
ABSOLUTE MAXIMUM RATINGS NOTE 1  
@ 25°C (unless otherwise noted)  
Collector  
IC  
10mA  
Current  
Maximum Temperatures  
Storage Temperature  
-55° to +150°C  
-55° to +150°C  
Operating Junction Temperature  
Maximum Power Dissipation  
ONE SIDE BOTH SIDES  
Device Dissipation @ Free Air  
Linear Derating Factor  
250mW  
500mW  
2.3mW/°C 4.3mW/°C  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
CHARACTERISTICS  
LS310 LS311 LS312 LS313  
UNITS CONDITIONS  
BVCBO  
BVCEO  
Collector to Base Voltage  
Collector to Emitter Voltage  
25  
25  
45  
45  
60  
60  
45  
45  
MIN.  
MIN.  
V
V
IC = 10µA, IE = 0  
IC = 1mA, IB = 0  
Emitter-Base Breakdown  
Voltage  
BVEBO  
BVCCO  
hFE  
6.0  
45  
6.0  
45  
6.0  
60  
6.0  
MIN.  
V
V
IE = 10µA, IC = 0 NOTE 2  
IC = 10µA, IE = IB = 0A  
IC = 10µA, VCE = 5V  
Collector to Collector Voltage  
45  
MIN.  
MIN.  
400  
1000 MAX.  
DC Current Gain  
150  
150  
200  
hFE  
hFE  
DC Current Gain  
150  
150  
150  
150  
200  
200  
400  
400  
MIN.  
MIN.  
IC = 100µA, VCE = 5V  
IC = 1mA, VCE = 5V  
IC = 1mA, IB = 0.1mA  
IE = 0, VCB = NOTE 3  
IC = 0, VCB = 3V  
DC Current Gain  
VCE(SAT)  
ICBO  
Collector Saturation Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
Out put Capacitance  
0.25 0.25 0.25 0.25 MAX.  
V
0.2  
0.2  
2
0.2  
0.2  
2
0.2  
0.2  
2
0.2  
0.2  
2
MAX.  
MAX.  
MAX.  
nA  
nA  
pF  
IEBO  
COBO  
IE = 0, VCB = 5V  
Collector to Collector  
Capacitance  
Collector to Collector Leakage  
Current  
Current Gain Bandwidth  
Product  
CC1C2  
IC1C2  
fT  
2
2
2
2
MAX.  
MAX.  
pF  
µA  
VCC = 0V  
1.0  
200  
1.0  
200  
1.0  
200  
1.0  
200  
VCC = NOTE 4  
IC = 1mA , VCE = 5V  
MIN. MHz  
MAX. dB  
IC = 100µA , VCE = 5V  
BW = 200Hz, RG = 10KΩ  
F=1KHz  
NF  
Narrow Band Noise Figure  
3
3
3
3
Linear Integrated Systems  
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 201121 06/19/2013 Rev#A9 ECN# LS310_11_12_13  

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