LS2BH thru LS2CH
Surface Mount Schottky Rectifier
Reverse Voltage 100~200V Forward Current 2A
Features
• Schottky barrier diodes
• Low forward voltage drop
• Low leakage current
• Moisture sensitivity: level 1, per J-STD-020
• Solder dip 260 °C, 10 s
• Low profile, typical thickness 1.0mm
eSGB (SMAF)
Typical Applications
For use of fast swiching in RF module, lighting, cellular phone, portable device,
power supplies, and other consumer applications.
Maximum Ratings (TA = 25 °C unless otherwise noted)
LS2BH
LS2B5H
150
LS2CH
Unit
V
Parameter
Symbol
VRRM
VRMS
VDC
Maximum repetitive peak reverse voltage
Maximum RMS voltage
100
200
70
105
140
V
Maximum DC blocking voltage
Maximum average forward rectified current
100
150
V
200
2.0
A
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
50
A
IFSM
- 55 to + 150
Operating junction and storage temperature range
°C
TJ, TSTG
Electrical Characteristics (TA = 25 °C unless otherwise noted)
LS2BH
LS2B5H
LS2CH
Unit
Volts
mA
Parameter
Test Conditions Symbol
Maximum instantaneous
forward voltage
0.85
VF
IR
IF=2A, Tj=25℃
0.2
30
Maximum DC reverse current at
rated DC blocking voltage
TA=25℃
TA=125℃
400
CJ
pF
Typical junction capacitance
4.0 V, 1 MHz
20
℃/W
Typical thermal resistance
juntion to lead
RθJL
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2015.07-Rev.A