LS12 thru LS1CH
Surface Mount Schottky Rectifier
Reverse Voltage 20~200V Forward Current 1A
Features
• Schottky barrier diodes
• Low forward voltage drop
• Low leakage current
• Moisture sensitivity: level 1, per J-STD-020
• Solder dip 260 °C, 10 s
eSGB (SMAF)
• Low profile, typical thickness 1.0mm
• AEC-Q101 qualified
ypical Applications
For use of fast swiching in RF module, lighting, cellular phone, portable device,
power supplies, and other consumer applications.
Maximum Ratings (TA = 25 °C unless otherwise noted)
LS12 LS14 LS16 LS18 LS19 LS1B LS1BH LS1B5H LS1CH Unit
Parameter
Symbol
Maximum repetitive peak reverse
Maximum RMS voltage
Maximum DC blocking voltage
20
14
20
40
28
40
60
42
60
80
56
80
90
63
90
100
70
100
70
150
105
150
200
140
200
V
V
V
VRRM
VRMS
VDC
100
100
Maximum average forward rectified
current
1.0
30
A
IF(AV)
Peak forward surge current 8.3 ms
single half sine-wave superimposed on
rated load
A
IFSM
Operating junction and storage
temperature range
TJ,
TSTG
- 55 to + 150
- 55 to + 175
°C
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
LS12 LS14 LS16 LS18 LS19 LS1B LS1BH LS1B5H LS1CH Unit
Test Conditions Symbol
Parameter
Maximum
0.50
0.81
0.70
0.90
Volts
mA
instantaneous
forward voltage
Maximum DC
reverse current at
rated DC blocking
voltage
Typical junction
capacitance
Typical thermal
resistance
VF
IR
IF=1A, TA=25℃
0.3
TA=25℃
TA=100℃
10
50
19
CJ
pF
4.0 V, 1 MHz
1)
℃/W
juntion to lead
RθJL
Note1:Thermal resistance from junction to lead,mounted on PCB with 0.315×0.315〃(8.0×8.0mm)copper pads
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2014.03-Rev.A