Datasheet > LS120A(TO-78)

LS120A(TO-78)

更新时间： 2024-11-25 09:51:39

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LS120A(TO-78) 数据手册

LS120A

MONOLITHIC DUAL

NPN TRANSISTOR

Linear Systems replaces discontinued Intersil IT120A

FEATURES

The LS120A is a monolithic pair of NPN transistors

Direct Replacement for INTERSIL IT120A

HIGH h_FE@ LOW CURRENT

OUTPUT CAPACITANCE

mounted in a single TO-78 package. The monolithic

dual chip design reduces parasitics and gives better

performance while ensuring extremely tight matching.

The LS120A is a direct replacement for discontinued

Intersil IT120A.

≥ 200 @ 10µA

≤ 2.0pF

≤ 3.0µV°C

V_BEtracking

ABSOLUTE MAXIMUM RATINGS ¹

@ 25°C (unless otherwise noted)

The hermetically sealed TO-78 is well suited for hi-rel

and harsh environment applications.

Maximum Temperatures

Storage Temperature

‐65°C to +200°C

‐55°C to +150°C

(See Packaging Information).

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (One side)

Continuous Power Dissipation (Both sides)

Linear Derating factor (One side)

Linear Derating factor (Both sides)

Maximum Currents

LS120A Features:

250mW

500mW

2.3mW/°C

4.3mW/°C

High h_feat low current

Tight matching

Tight V_BEtracking

Low Output Capacitance

Collector Current

10mA

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

|V_BE1– V_BE2

∆|(V_BE1– V_BE2)| / ∆T

CHARACTERISTIC

MIN

‐‐

TYP

‐‐

MAX

UNITS

µV/°C

CONDITIONS

Base Emitter Voltage Differential

Change with Temperature

Base Current Differential

I_C= 10µA, V_CE= 5V

T_A= ‐55°C to +125°C

I_C= 10µA, V_CE= 5V

|I_B1– I_B2

‐‐

2.5

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_CBO

BV_CEO

BV_EBO

BV_CCO

h_FE

CHARACTERISTICS

MIN.

TYP.

‐‐

MAX.

‐‐

0.5

‐‐

UNITS

CONDITIONS

I_C= 10µA, I_E= 0

Collector to Base Voltage

Click To Buy

Collector to Emitter Voltage

Emitter‐Base Breakdown Voltage

Collector to Collector Voltage

DC Current Gain

6.2

200

225

‐‐

I_C= 10µA, I_B= 0

I_E= 10µA, I_C= 0²

I_C= 10µA, I_E= 0

I_C= 10µA, V_CE= 5V

I_C= 1.0mA, V_CE= 5V

I_C= 0.5mA, I_B= 0.05mA

I_C= 0, V_EB= 3V

V_CE(SAT)

I_EBO

I_CBO

C_OBO

C_C1C2

I_C1C2

f_T

Collector Saturation Voltage

Emitter Cutoff Current

Collector Cutoff Current

Output Capacitance

Collector to Collector Capacitance

Collector to Collector Leakage Current

Current Gain Bandwidth Product

Narrow Band Noise Figure

I_E= 0, V_CB= 45V

I_E= 0, V_CB= 5V

V_CC= 0V

V_CC= ±60V

‐‐

220

‐‐

MHz

I_C= 1mA, V_CE= 5V

I_C= 100µA, V_CE= 5V, BW=200Hz, R_G= 10KΩ,

f = 1KHz

Notes:

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.

TO-78 (Bottom View)

Available Packages:

LS120A in TO-78

LS120A available as bare die

Please contact Micross for full package and die dimensions:

Email: chipcomponents@micross.com

Web: www.micross.com/distribution.aspx

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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与LS120A(TO-78)相关器件

型号	品牌	获取价格	描述	数据表
LS120A_PDIP	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS120A_SOIC	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS120A_SOT-23	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS120A_TO-71	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS120A_TO-78	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS121	MICROSS	获取价格	Linear Systems replaces discontinued Intersil IT121
LS121_PDIP	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS121_SOIC	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS121_SOT-23	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR
LS121_TO-71	MICROSS	获取价格	MONOLITHIC DUAL NPN TRANSISTOR

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