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LRB751V-40T1G_11 PDF预览

LRB751V-40T1G_11

更新时间: 2024-10-28 12:26:39
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
3页 108K
描述
SCHOTTKY BARRIER DIODE High reliability

LRB751V-40T1G_11 数据手册

 浏览型号LRB751V-40T1G_11的Datasheet PDF文件第2页浏览型号LRB751V-40T1G_11的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
SCHOTTKYBARRIERDIODE  
Features  
(1)Small surface mounting type SC-76/SOD-323  
(2)Low reverse current and low forward voltage.  
(3)High reliability  
LRB751V-40T1G  
Construction  
silicon epitaxial planar  
SC-76/SOD-323  
We declare that the material of product  
compliance with RoHS requirements.  
ORDERING INFORMATION  
1
2
Device  
Package  
Shipping  
CATHODE  
ANODE  
LRB751V-40T1G  
SOD-323/SC-76  
3000/Tape&Reel  
LRB751V-40T3G  
SOD-323/SC-76  
10000/Tape&Reel  
MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
Limits  
40  
Unit  
V
Peak reverse voltage  
DC reverse voltage  
Mean rectifying current  
Peak forward surge current*  
Junction temperature  
Storage temperature  
*60Hz for 1  
VRM  
VR  
30  
V
IO  
30  
mA  
mA  
°C  
°C  
IFSM  
Tj  
200  
125  
Tstg  
-40~+125  
DEVICE MARKING  
LRB751V-40T1G= 5E  
ELECTRICAL CHARACTERISTICS(TA=25°C)  
Parameter  
Symbol  
Min.  
-
Typ  
-
Max.  
0.37  
0.5  
Unit  
Conditions  
Forward voltage  
VF  
IR  
V
IF=1mA  
Reverse current  
=30V  
-
-
µA  
VR  
Capacitance between terminals  
CT  
-
2.0  
-
pF  
VR=1V,f=1MHz  
Rev.O 1/3  

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