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LRB751S-40T1 PDF预览

LRB751S-40T1

更新时间: 2024-10-28 11:43:15
品牌 Logo 应用领域
乐山 - LRC 肖特基二极管
页数 文件大小 规格书
3页 64K
描述
SCHOTTKY BARRIER DIODE

LRB751S-40T1 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.76Is Samacsys:N
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.37 V最大非重复峰值正向电流:0.2 A
元件数量:1最高工作温度:125 °C
最大输出电流:0.03 A最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

LRB751S-40T1 数据手册

 浏览型号LRB751S-40T1的Datasheet PDF文件第2页浏览型号LRB751S-40T1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
SCHOTTKYBARRIERDIODE  
LRB751S-40T1  
Features  
(1)Small surface mounting type SC-76/SOd323  
(2)Low reverse current and low forward voltage.  
(3)High reliability  
Construction  
silicon epitaxial planar  
SC-79/SOD-523  
1
2
CATHODE  
ANODE  
MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Symbol  
VRM  
VR  
Limits  
40  
Unit  
V
30  
V
Mean rectifying current  
Peak forward surge current  
Junction temperature  
Storage temperature  
IO  
30  
mA  
mA  
°C  
°C  
IFSM  
Tj  
200  
125  
Tstg  
-40~+125  
DEVICE MARKING  
LRB751S-40T1= 5  
ELECTRICAL CHARACTERISTICS(TA=25°C)  
Parameter  
Symbol  
Min.  
Typ  
Max.  
Unit  
Conditions  
Forward voltage  
VF  
IR  
-
-
0.37  
V
IF=1mA  
Reverse current  
=30V  
VR  
VR=1V,f=1MHz  
-
-
-
2.0  
0.5  
-
µA  
pF  
Capacitance between terminals  
CT  
LRB751S-40T1–1/3  

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