Datasheet > LRB751G-40T1G

LRB751G-40T1G

更新时间： 2022-03-19 13:47:11

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
4页	448K
描述
Schottky barrier diode General rectification

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中文翻译

获取价格

数据手册

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LRB751G-40T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Schottky barrier diode

LRB751G-40T1G

zApplications

General rectification

LRB751G-40T1G

zFeatures

1) Small power mold type.

(SO D-723)

2) Low V

SOD-723

3) High reliability

4) Pb-Free package is available

zConstruction

Silicon epitaxial planar

zAbsolute maximum ratings (Ta=25°C)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Limits

Symbol

V_RM

V_R

Unit

Average rectified forward current

Forward current surge peak （60Hz・1cyc）

Junction temperature

200

125

I_FSM

℃

Storage temperature

-40 to +125

Tstg

℃

zElectrical characteristic (Ta=25°C)

Parameter

Forward voltage

Symbol

Min.

Typ.

Max.

0.37

0.5

Unit

Conditions

V_F

I_R

I_F=1mA

V_R=30V

Reverse current

µA

Capacitance between terminals

V_R=1V , f=1MHz

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LRB751G-40T1G

4000/Tape&Reel

Rev.O 1/4

12 3 4

中文翻译

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