Datasheet > LRB501V-40T1G_11

LRB501V-40T1G_11

更新时间： 2024-10-19 12:01:31

品牌	Logo	应用领域
乐山 - LRC		肖特基二极管
页数	文件大小	规格书
3页	65K
描述
Surface Mount Schottky Diode Low current rectification

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LRB501V-40T1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

Surface Mount Schottky Diode

Applications

LRB501V-40T1G

Low current rectification

Features

1) Small surface mounting type.

2) High reliability.

We declare that the material of product

compliance with RoHS requirements.

Construction

Silicon epitaxial planar

SOD-323

Device marking and ordering information

Device

Marking

Shipping

LRB501V-40T1G

3000/Tape&Reel

CATHODE

ANODE

LRB501V-40T3G

10000/Tape&Reel

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Peak reverse voltage

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

Power Dissipation

Symbol

Limits

Unit

0.1

∗

IFSM

125

°C

Tstg

−40

+125

200

∗ 60 Hz for 1

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

−

Max.

0.55

0.34

Unit

Conditions

Forward voltage

−

=100mA

=10mA

Forward voltage

−

Reverse current

−

µA

=10V

=10V, f=1MHz

Capacitance between terminals

Note) ESD sensitive product handling required.

6.0

−

Rev.O 1/3

12 3

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