Datasheet > LRB491DLT3G

LRB491DLT3G

更新时间： 2024-10-19 12:26:39

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
3页	182K
描述
Schottky barrier diode Low-power rectification

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数据手册

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LRB491DLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

Schottky barrier diode

LRB491DLT1G

zApplications

1) Low-power rectification

2) For switching power supply

zFeatures

1) Small mold type. (SOT-23)

SOT– 23

2) Ultra low V . (V =0.40V Typ. at 1A)

F=1.0A guaranteed despite the size.

3) I

zConstruction

Silicon epitaxial planar

CATHODE

ANODE

We declare that the material of product

compliance with RoHS requirements.

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Peak reverse voltage

DC reverse voltage

DC forward current

Peak forward surge current

Junction temperature

Storage temperature

∗ 60Hz for 1

Symbol

Limits

Unit

VRM

1.0

∗

FSM

125

˚C

Tstg

−40∼+125

zElectrical characteristics (Ta = 25°C)

Parameter

Forward voltage

Reverse current

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

−

0.45

200

=1.0A

=20V

−

µA

Note) ESD sensitive product handling required.

Device marking and ordering information

Shipping

Device

Marking

3000/Tape&Reel

10000/Tape&Reel

D2E

LRB491DLT1G

LRB491DLT3G

D2E

Rev.O 1/3

12 3

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