Datasheet > LRB425LT1G

LRB425LT1G

更新时间： 2024-10-19 12:01:31

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
3页	89K
描述
Schottky barrier diode Low power rectification

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LRB425LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Schottky barrier diode

LRB425LT1G

!Applications

Low power rectification

!Features

1) Small surface mounting type. (SMD3)

SOT-23

2) Low V . (V =0.45V Typ. at 100mA)

3) High reliability.

4) We declare that material of product compliance

with ROHS requirements.

!Construction

Silicon epitaxial planar

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

3000/Tape&Reel

D3L

LRB425LT1G

D3L

10000/Tape&Reel

LRB425LT3G

!Absolute maximum ratings (Ta = 25°C)

Parameter

Peak reverse voltage

DC reverse voltage

Mean rectifying current

Peak forward surge curren^∗

Junction temperature

Storage temperature

∗ 60Hz for 1

Symbol

Limits

Unit

VRM

0.1

FSM

125

°C

Tstg

−40~+125

!Electrical characteristics (Ta = 25°C)

Parameter

Forward voltage

Symbol

Min.

Typ.

−

Max.

0.55

0.34

Unit

Conditions

−

=100mA

=10mA

Forward voltage

−

Reverse current

−

µA

=10V

=10V, f=1MHz

Capacitance between terminals

6.0

−

Note) ESD sensitive product handling required.

Rev.O 1/3

12 3

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