Datasheet > LRB421LT1G

LRB421LT1G

更新时间： 2024-10-19 12:26:39

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
4页	253K
描述
Schottky barrier diode Low power rectification

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数据手册

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LRB421LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Schottky barrier diode

LRB421LT1G

zApplications

Low power rectification

zFeatures

1) Small mold type. (SOT-23)

SOT– 23

2) Low I

3) High reliability.

zConstruction

Silicon epitaxial planar

CATHODE

ANODE

We declare that the material of product

compliance with RoHS requirements.

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Limits

Symbol

V_RM

V_R

Unit

100

Average rectified forward current *1

（

）

Forward current surge peak 60Hz 1cyc *1

）（）

I_FSM

（

・

Junction temperature

Storage temperature

125

℃

-40 to +125

Tstg

(*1) Rating of per diode

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

V_F1

V_F2

I_R

0.55

0.34

I_F=100mA

I_F=10mA

V_R=10V

Forwarad voltage

Reverse current

µA

Capacitance between terminal

V_R=10V , f=1MHz

Device marking and ordering information

Shipping

Device

Marking

LRB421LT1G

D3C

3000/Tape&Reel

D3C

LRB421LT3G

10000/Tape&Reel

Rev.O 1/4

12 3 4

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